2SC4581 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581
DESCRIPTION
- With TO-3PML package
- High voltage,high speed
- Switching power transistor PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 8 A PC Collector power dissipation T C=25 65 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.92 /W Fig.1 simplified outline (TO-3PML) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=5A; IB=1 A 1.0 V VBEsat Base-emitter saturation voltage I C=5A; IB=1 A 1.5 V VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A; IB=0 450 V IEBO Emitter cut-off current At rated voltage 0.1 mA ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA hFE-1 DC current gain I C=5 A ; VCE=5V 10 hFE-2 DC current gain I C=1mA ; VCE=5V 5 fT Transition frequency I C=1A ; VCE=10V 20 MHz Switching times ton Turn-on time 0.5 µs tstg Storage time 2.0 µs tf Fall time IC=5A;RL=30D IB1=1A; IB2=2A VBB2=4V 0.2 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4581 PACKAGE OUTLINE Fig.2 Outline dimensions