2SC4370 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4370
DESCRIPTION
- With TO-220F package
- Complement to type 2SA1659
- High transition frequency
APPLICATIONS
- High voltage applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A IB Base current 0.15 A PC Collector dissipation T C=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4370 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 160 V VCEsat Collector-emitter saturation voltage I C=0.5A; IB=50mA 1.5 V VBE Base-emitter on voltage I C=0.5A;VCE=5V 1.0 V ICBO Collector cut-off current V CB=160V; IE=0 1.0 µA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 µA hFE DC current gain I C=0.1A ; VCE=5V 70 240 fT Transition frequency I C=0.1A ; VCE=10V 100 MHz COB Collector output capacitance f=1MHz;V CB=10V 25 pF hFE Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4370 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)