2SC4369 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369
DESCRIPTION
- With TO-220F package
- Complement to type 2SA1658
- Good linearity of hFE
APPLICATIONS
- For general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 0.3 A PC Collector dissipation T C=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 30 V VCEsat Collector-emitter saturation voltage I C=2A ;IB=0.2A 0.8 V VBE Base-emitter on voltage I C=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current V CB=20V; IE=0 1.0 µA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 µA hFE-1 DC current gain I C=0.5A ; VCE=2V 70 240 hFE-2 DC current gain I C=2.5A ; VCE=2V 25 fT Transition frequency I C=0.5A ; VCE=2V 100 MHz hFE-1 Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 PACKAGE OUTLINE Fig.2 Outline dimensions