2SC4236 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4236
DESCRIPTION
- With TO-247 package
- Switching power transistor
- High breakdown voltage PINNING Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 6 A ICM Collector current-Peak 12 A IB Base current 3 A IBM Base current-Peak 6 A PD Total power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.25 /W PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Fig.1 simplified outline (TO-247) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4236 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A; IB=0 800 V VCEsat Collector-emitter saturation voltage I C=3A ;IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain I C=3A ; VCE=5V 8 hFE-2 DC current gain I C=1mA ; VCE=5V 7 fT Transition frequency I C=0.6A ; VCE=10V 8 MHz Switching times resistive load ton Turn-on time 0.5 µs ts Storage time 3.5 µs tf Fall time IC=3A IB1=0.6A; IB2=1.2A VBB2=4V ,RL=85C 0.3 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4236 PACKAGE OUTLINE Fig.2 Outline dimensions