2SC4052 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052
DESCRIPTION
- With ITO-220 package
- Switching power transistor PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 1 A IBM Base current-Peak 2 A PT Total power dissipation T C=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 5.0 /W Fig.1 simplified outline (ITO-220) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ;IB=0 450 V VCEsat Collector-emitter saturation voltage I C=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage I C=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated volatge 0.1 mA IEBO Emitter cut-off current At rated volatge 0.1 mA hFE-1 DC current gain I C=1.5A ; VCE=5V 10 hFE-2 DC current gain I C=1mA ; VCE=5V 5 fT Transition frequency I C=0.3A ; VCE=10V 20 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 2.0 µs tf Fall time IC=1.5A;IB1=0.3A IB2=0.6A ,RL=100B VBB2=4V 0.2 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)