C3M0075120K ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
www.iscsemi.com 1
FEATURES
- HighBlockingVoltagewith LowOn-Resistance
- RDS(ON)=75mΩ（TYP.）@VGS=18VTj=25℃
- HighSpeedSwitching with LowCapacitance
- EasytoParallelandSimple toDrive
APPLICATIONS
- SolarInverters
- SwitchMode PowerSupplies
- DC-DCConverters
- Motordrives AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1200 V VGSS Gate-SourceOpetationVoltage -4/+18 V ID DrainCurrent-Continuous 38 A DrainCurrent-Continuous@Tc=100℃ 27 A IDM DrainCurrent-SinglePluse 80 A PD TotalDissipation@TC=25℃ 214 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.7 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.1mA 1200 -- -- V VGS(th) GateThresholdVoltage VDS =10V;ID =5mA 2.0 2.8 3.6 V RDS(ON) Drain-SourceOn-stageResistance VGS=18V;ID=20A - 75 80 mΩ RDS(ON) Drain-SourceOn-stageResistance VGS=18V;ID=40A;TJ=175℃ -- 125 -- mΩ IGSS GateSourceLeakageCurrent VGS=18V;VDS=0V -- 10 250 nA IDSS ZeroGateVoltageDrainCurrent VDS =1200V;VGS =0V -- 1 50 μA gfS Transconductance VDS =20V;ID=40A -- 10 -- S Ciss InputCapacitance VGS =0V, VDS =1000V, f=1MHz VAC=25mV -- 920 -- pFCoss OutputCapacitance -- 60 -- Crss ReverseTransferCapacitance -- 4 -- Qg TotalGateCharge VDD=800V, ID=20A, VGS=-4to+18V -- 40 -- nCQgs Gate-SourceCharge -- 7.5 -- Qgd Gate-DrainCharge -- 20 -- td(on) Turn-onDelayTime VGS=-4to+18V ID=20A, VDS=800V, Rg=2.5Ω, inductiveload -- 19 -- ns tr Turn-onRiseTime -- 21 -- td(off) Turn-offDelayTime -- 15 -- tf Turn-offFallTime -- 17 -- EON Turn-OnSwitchingEnergy (SiCDiodeFWD) VGS=-4to+15V ID=40A, VDS=800V, Rg=2.5Ω -- 320 -- uJ EOFF TurnOffSwitchingEnergy (SiCDiodeFWD) -- 48 --
www.iscsemi.com 3 SOURCE-DRAINBODYDIODE CHARACTERISTICS Drain-SourceBodyDiodeCharacteristics VSD DiodeForwardVoltage ISD=20A;VGS=-4V -- 4.3 -- V VSD DiodeForwardVoltage ISD=20A;VGS=-4V;TJ=175℃ -- 3.8 -- V trr ReverseRecoveryTime VGS =-4V,ISD =40A, VR =800V dif/dt=700A/µs TJ=175℃ -- 41 -- ns Qrr ReverseRecoveryCharge -- 405 -- uC PackageDimensions(UNIT:MM): TO-247-4
www.iscsemi.com 4 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.