C3M0065090J WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • New C3M SiC MOSFET technology
  • New low impedance package with driver source pin
  • High blocking voltage with low On-resistance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Low output capacitance (60pF)
  • Halogen free, RoHS compliant
  • Wide creepage (~7mm) between drain and source Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Increase power density
  • Increase system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies Package VDS 900 V I D @ 25˚C 35 A RDS(on) 65 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note. 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

22 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 90 A Pulse width tP limited by Tjmax Fig. 22 EAS Avalanche energy, Single pulse 110 mJ ID = 22A, VDD = 50V PD Power Dissipation 113 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 2 3 4 5 6 7 G DS S S S S S TAB Drain Drain (TAB) Power Source (Pin 3,4,5,6,7) Driver Source (Pin 2) Gate (Pin 1) Part Number Package C3M0065090J TO-263-7

C3M0065090J Rev. D, 06-2019 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA Fig. 11

1.6 V VDS = VGS, ID = 5 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 65 78 mΩ VGS = 15 V, ID = 20 A Fig. 4, 5, 690 VGS = 15 V, ID = 20A, TJ = 150ºC gfs Transconductance S VDS= 15 V, IDS= 20 A Fig. 7

13 VDS= 15 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 760 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 66 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 16 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 42 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20 A, RG(ext) = 2.5 Ω, L= 65.7 μH, TJ = 150ºC Fig. 26, Note. 3EOFF Turn Off Switching Energy (Body Diode FWD) 6 td(on) Turn-On Delay Time 7 ns VDD = 400 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 tr Rise Time 8 td(off) Turn-Off Delay Time 13 tf Fall Time 4 RG(int) Internal Gate Resistance 3.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 9 nC VDS = 400 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 9 Qg Total Gate Charge 30 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.4 V VGS = -4 V, ISD = 10 A Fig. 8, 9, 104.0 V VGS = -4 V, ISD = 10 A, TJ = 150 °C IS Continuous Diode Forward Current 22 A VGS = -4 V Note 1 IS, pulse Diode pulse Current 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recovery time 8 ns VGS = -4 V, ISD = 20 A, VR = 500 V dif/dt = 5400 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 215 nC Irrm Peak Reverse Recovery Current 32 A Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.1 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

0.01 SinglePulse

Figure 22. Safe Operating AreaFigure 21. Transient Thermal Impedance Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs.

Figure 30. Clamped Inductive Switching

C3M0065090J Rev. D, 06-2019 Package Dimensions Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max A 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e 1.27 H 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 Ø 0˚ 4˚ 8˚ Ø1 4.5˚ 5˚ 5.5˚ TO-263-7

C3M0065090J Rev. D, 06-2019 Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power/Tools-and-Support
  • Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power/Tools-and-Support