C3M0045065K WOLFSPEED | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 12

Technical content

Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • EV chargers
  • Server & Telecom PSU
  • UPS
  • Solar inverters
  • SMPS
  • DC/DC converters Package Part Number Package Marking C3M0045065K TO 247-4 C3M0045065K VDS 650 V I D @ 25˚C 49 A RDS(on) 45 mΩ Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4) Maximum Ratings Symbol Parameter Value Unit Note VDSS Drain - Source Voltage, TC = 25 ˚C 650 V VGS Gate - Source voltage (Under transient events < 100 ns) -8/+19 V Fig. 29 ID Continuous Drain Current, VGS = 15 V, TC = 25˚C 49 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 100˚C 35 ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 132 A PD Power Dissipation, TC=25˚C, TJ = 175 ˚C 176 W Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +175 ˚C TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in

C3M0045065K Rev 1, 12-2020 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 μA VGSon Gate-Source Recommended Turn-On Voltage 15 V Static Fig. 29 VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage 1.8 2.6 3.6 V VDS = VGS, ID = 4.84 mA Fig. 11 2.2 V VDS = VGS, ID = 4.84 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 45 60 mΩ VGS = 15 V, ID = 17.6 A Fig. 4, 5,6 61 VGS = 15 V, ID = 17.6 A, TJ = 175ºC gfs Transconductance S VDS= 20 V, IDS= 17.6 A Fig. 7 11 VDS= 20 V, IDS= 17.6 A, TJ = 175ºC Ciss Input Capacitance 1621 pF VGS = 0 V, VDS = 0V to 600 V F = 1 Mhz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 101 Crss Reverse Transfer Capacitance 8 Co(er) Effective Output Capacitance (Energy Related) 126 VGS = 0 V, VDS = 0V to 400 V Note: 1 Co(tr) Effective Output Capacitance (Time Related) 178 Note: 1 Eoss Coss Stored Energy 20 μJ VDS = 600 V, F = 1 Mhz Fig. 16 EON Turn-On Switching Energy (Body Diode) 57 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC FWD = Internal Body Diode of MOSFET Fig. 25 EOFF Turn Off Switching Energy (Body Diode) 14 EON Turn-On Switching Energy (External Diode) 44 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC FWD = External SiC DIODE Fig. 25 EOFF Turn Off Switching Energy (External Diode) 14 td(on) Turn-On Delay Time 9 ns VDD = 400 V, VGS = -4 V/15 V ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH Timing relative to VDS Inductive load Fig. 26 tr Rise Time 12 td(off) Turn-Off Delay Time 18 tf Fall Time 6 RG(int) Internal Gate Resistance 3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 21 nC VDS = 400 V, VGS = -4 V/15 V ID = 17.6 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 18 Qg Total Gate Charge 63 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V

C3M0045065K Rev 1, 12-2020 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V VGS = -4 V, ISD = 8.8 A, TJ = 25 °C Fig. 8, 9, 10 4.2 V VGS = -4 V, ISD = 8.8 A, TJ = 175 °C IS Continuous Diode Forward Current 29 A VGS = -4 V, TC = 25˚C IS, pulse Diode pulse Current 132 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 13 ns VGS = -4 V, ISD = 17.6 A, VR = 400 V dif/dt = 5215 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 247 nC Irrm Peak Reverse Recovery Current 36 A trr Reverse Recover time 18 ns VGS = -4 V, ISD = 17.6 A, VR = 400 V dif/dt = 1775 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 171 nC Irrm Peak Reverse Recovery Current 16 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.85 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

C3M0045065K Rev 1, 12-2020 Package Dimensions Package TO-247-4L

C3M0045065K Rev 1, 12-2020 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS

C3M0045065K Rev 1, 12-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support