C3M0040120J1 WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter and Telecom Power Supplies
  • EV Battery Chargers
  • High voltage DC/DC converters
  • Energy Storage Systems
  • Solar Inverters Package Part Number Package Marking C3M0040120J1 TO-263-7L XL C3M0040120J1 Drain (TAB) Power Source (Pin 3,4,5,6,7) Driver Source (Pin 2) Gate (Pin 1) 1 2 3 4 5 6 7 G KS S S S S S TAB Drain C3M0040120J1 Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enchancement Mode Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

42 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 100 A Pulse width tP limited by Tjmax PD Power Dissipation 272 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V

Rev. 0, October 2021 © 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.7 3.6 V VDS = VGS, ID = 9.2 mA Fig. 11 2.2 V VDS = VGS, ID = 9.2 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 40 53.5 mΩ VGS = 15 V, ID = 33.3 A Fig. 4, 5, 660 VGS = 15 V, ID = 33.3 A, TJ = 150ºC gfs Transconductance S VDS= 20 V, IDS= 33.3 A Fig. 7 20 VDS= 20 V, IDS= 33.3 A, TJ = 150ºC Ciss Input Capacitance 2900 pF VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 103 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 60 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 339 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 33.3 A, RG(ext) = 2.5Ω, L= 99 μH, Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 67 td(on) Turn-On Delay Time 13 ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, ID = 33.3 A, L= 99 Timing relative to VDS, Inductive load Fig. 27 tr Rise Time 18 td(off) Turn-Off Delay Time 22 tf Fall Time 8 RG(int) Internal Gate Resistance 3.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 35 nC VDS = 800 V, VGS = -4 V/15 V ID = 33.3 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 27 Qg Total Gate Charge 94

Rev. 0, October 2021 © 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 5.5 V VGS = -4 V, ISD = 20 A, TJ = 25°C Fig. 8, 9, 10

4.5 V VGS = -4 V, ISD = 20 A, TJ = 150°C

IS Continuous Diode Forward Current 44 A VGS = -4 V, TC = 25˚C Note 1 IS, pulse Diode pulse Current 100 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 11 ns VGS = -4 V, ISD = 33.3 A, VR = 800 V dif/dt = 9890 A/µs Note 1Qrr Reverse Recovery Charge 323 nC Irrm Peak Reverse Recovery Current 52 A trr Reverse Recover time 17 ns VGS = -4 V, ISD = 33.3 A, VR = 800 V dif/dt = 1815 A/µs Note 1Qrr Reverse Recovery Charge 150 nC Irrm Peak Reverse Recovery Current 16 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.46 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

The information in this document is subject to change without notice. Figure 28. Clamped Inductive Switching Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

Rev. 0, October 2021 © 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Package Dimensions TO-263-7L XL Minimum Creepage Distance = 4.7mm (D5 + D3) CREE CONFIDNTIAL & PROPRIETARY © 2018 Cree, Inc. All rights reserved. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. 8.0 10.8 4.7 8.1 6.4 0.81.27 16.85 Pin 1 Notes: 1. All dimensions are in Millimeters. Angles are in Degrees Package Top View When Solder PCB Pad Layout Top View

Rev. 0, October 2021 © 2021 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Notes This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. Not withstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. . This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. For more information please contact:

4600 Silicon Drive Durham, NC 27703 USA

Tel: +1.919.313.5300 www.wolfspeed.com/power