C3M0032120J1 WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch Package Part Number Package Marking C3M0032120J1 TO-263-7L XL C3M0032120J1 VDS 1200 V I D @ 25˚C 68 A RDS(on) 32 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

44 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 120 A Pulse width tP limited by Tjmax PD Power Dissipation 277 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V Drain (TAB) Power Source (Pin 3,4,5,6,7) Driver Source (Pin 2) Gate (Pin 1) 1 2 3 4 5 6 7 G KS S S S S S TAB Drain

C3M0032120J1 Rev. 2, 12-2020 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.7 3.6 V VDS = VGS, ID = 11.5 mA Fig. 11 2.2 V VDS = VGS, ID = 11.5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 23 32 43 mΩ VGS = 15 V, ID = 41.4 A Fig. 4, 5, 655 VGS = 15 V, ID = 41.4 A, TJ = 150ºC gfs Transconductance S VDS= 20 V, IDS= 41.4 A Fig. 7 24 VDS= 20 V, IDS= 41.4 A, TJ = 150ºC Ciss Input Capacitance 3424 pF VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 133 Crss Reverse Transfer Capacitance 11 Eoss Coss Stored Energy 72 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 360 μJ VDS = 800 V, VGS = -4 V/+15 V, ID = 41.4 A, RG(ext) = 2.5Ω, L= 99 μH, Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 90 td(on) Turn-On Delay Time 15 ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, ID = 41.4 A, L= 99 μH Timing relative to VDS, Inductive load Fig. 27 tr Rise Time 16 td(off) Turn-Off Delay Time 25 tf Fall Time 7 RG(int) Internal Gate Resistance 1.6 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 40 nC VDS = 800 V, VGS = -4 V/15 V ID = 41.4 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 28 Qg Total Gate Charge 111

C3M0032120J1 Rev. 2, 12-2020 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 5.0 V VGS = -4 V, ISD = 20 A, TJ = 25 °C Fig. 8, 9, 10

4.5 V VGS = -4 V, ISD = 20 A, TJ = 150 °C

IS Continuous Diode Forward Current 49 A VGS = -4 V, TC = 25˚C Note 1 IS, pulse Diode pulse Current 120 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 13 ns VGS = -4 V, ISD = 41.4 A, VR = 800 V dif/dt = 7450 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 323 nC Irrm Peak Reverse Recovery Current 45 A trr Reverse Recover time 18 ns VGS = -4 V, ISD = 41.4 A, VR = 800 V dif/dt = 2200 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 164 nC Irrm Peak Reverse Recovery Current 16 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.45 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Figure 29. Clamped Inductive Switching Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0032120J1 Rev. 2, 12-2020 Package Dimensions TO-263-7L XL Minimum Creepage Distance = 4.7mm (D5 + D3)

C3M0032120J1 Rev. 2 , 12-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support