C3M0032120D WOLFSPEED | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 11

Technical content

Features

  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies Package Part Number Package Marking C3M0032120D TO 247-3 C3M0032120D VDS 1200 V I D @ 25˚C 63 A RDS(on) 32 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

48 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 120 A Pulse width tP limited by Tjmax PD Power Dissipation 283 W TC=25˚C, TJ = 175 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +175 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V

C3M0032120D Rev. -, 08-2019 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 V VDS = VGS, ID = 11.5 mA Fig. 11 2.0 V VDS = VGS, ID = 11.5 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 23 32 43 mΩ VGS = 15 V, ID = 40 A Fig. 4, 5, 657.6 VGS = 15 V, ID = 40 A, TJ = 175ºC gfs Transconductance S VDS= 20 V, IDS= 40 A Fig. 7

22 VDS= 20 V, IDS= 40 A, TJ = 175ºC

Ciss Input Capacitance 3357 pF VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 129 Crss Reverse Transfer Capacitance 8 Eoss Coss Stored Energy 76 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 1.94 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC Fig. 26 EOFF Turn Off Switching Energy (SiC Diode FWD) 0.79 EON Turn-On Switching Energy (Body Diode FWD) 3.10 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 40 A, RG(ext) = 5Ω, L= 157 μH, Tj = 175ºC Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 0.72 td(on) Turn-On Delay Time 107 ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 5 Ω, ID = 40 A, L= 157 Timing relative to VDS, Inductive load Fig. 27 tr Rise Time 22 td(off) Turn-Off Delay Time 39 tf Fall Time 19 RG(int) Internal Gate Resistance 1.7 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 35 nC VDS = 800 V, VGS = -4 V/15 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 40 Qg Total Gate Charge 114

C3M0032120D Rev. -, 08-2019 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.6 V VGS = -4 V, ISD = 20 A, TJ = 25 °C Fig. 8, 9, 10

4.2 V VGS = -4 V, ISD = 20 A, TJ = 175 °C

IS Continuous Diode Forward Current 62 A VGS = -4 V, TC = 25˚C Note 1 IS, pulse Diode pulse Current 120 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 69 ns VGS = -4 V, ISD = 40 A, VR = 800 V dif/dt = 1500 A/µs, TJ = 175 °C Note 1Qrr Reverse Recovery Charge 848 nC Irrm Peak Reverse Recovery Current 19 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.45 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Figure 29. Clamped Inductive Switching Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0032120D Rev. -, 08-2019 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV

C3M0032120D Rev. - , 08-2019 Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support