C3M0030090K WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies Package Part Number Package Marking C3M0030090K TO 247-4 C3M0030090K VDS 900 V I D @ 25˚C 73 A RDS(on) 30 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

48 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 200 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 240 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4)

C3M0030090K Rev. 4, 01-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.7 2.4 3.5 V VDS = VGS, ID = 11 mA Fig. 11

2.1 V VDS = VGS, ID = 11 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 30 39 mΩ VGS = 15 V, ID = 35 A Fig. 4, 5, 641 VGS = 15 V, ID = 35 A, TJ = 150ºC gfs Transconductance S VDS= 20 V, IDS= 35 A Fig. 7

22 VDS= 20 V, IDS= 35 A, TJ = 150ºC

Ciss Input Capacitance 1503 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 144 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 30 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 133 μJ VDS = 600 V, VGS = -4 V/15 V, ID = 35 A, RG(ext) = 2.5Ω, L= 59 μH, TJ = 150ºC Fig. 26, 29bEOFF Turn Off Switching Energy (SiC Diode FWD) 111 EON Turn-On Switching Energy (Body Diode FWD) 246 μJ VDS = 600 V, VGS = -4 V/15 V, ID = 35 A, RG(ext) = 2.5Ω, L= 59 μH, TJ = 150ºC Fig. 26, 29aEOFF Turn Off Switching Energy (Body Diode FWD) 99 td(on) Turn-On Delay Time 9 ns VDD = 600 V, VGS = -4 V/15 V ID = 35 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 tr Rise Time 15 td(off) Turn-Off Delay Time 24 tf Fall Time 9 RG(int) Internal Gate Resistance 3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 20 nC VDS = 600 V, VGS = -4 V/15 V ID = 35 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 26 Qg Total Gate Charge 74 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.5 V VGS = -4 V, ISD = 17.5 A Fig. 8, 9, 104.0 V VGS = -4 V, ISD = 17.5 A, TJ = 150 °C IS Continuous Diode Forward Current 48 A VGS = -4 V, TC = 25 °C Note 1 IS, pulse Diode pulse Current 200 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 24 ns VGS = -4 V, ISD = 35 A, VR = 600 V dif/dt = 3075 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 536 nC Irrm Peak Reverse Recovery Current 35 A Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.48 0.52 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

C3M0030090K Rev. 4, 01-2021 Package Dimensions Package TO-247-4L

C3M0030090K Rev. 4, 01-2021 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS

C3M0030090K Rev. 4, 01-2021 Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support