C3M0025065K

C3M0025065K WOLFSPEED | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 13

Technical content

Features

• C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• EV chargers
• UPS
• Solar inverters
• Industrial SMPS
• DC/DC converters Package Part Number Package Marking C3M0025065K TO 247-4 C3M0025065K Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4) Maximum Ratings Symbol Parameter Value Unit Note VDSS Drain - Source Voltage, TC = 25 ˚C 650 V VGSmax Gate - Source Voltage -8/+19 V Note: 1 ID Continuous Drain Current, VGS = 15 V, TC = 25˚C 97 A Fig. 19 Note: 2Continuous Drain Current, VGS = 15 V, TC = 100˚C 70 ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 251 A Fig. 22 PD Power Dissipation, TC=25˚C, TJ = 175 ˚C 326 W Fig. 20 Note: 2 TJ , Tstg Operating Junction and Storage Temperature -40 to +175 ˚C TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in Note (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V Note (2): Verified by design C3M0025065K C3MTM MOSFET Technology N-Channel Enhancement Mode Silicon Carbide Power MOSFET

Rev. 2, OCTOBER 2022 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.3 3.6 V VDS = VGS, ID = 9.22 mA Fig. 11 1.9 V VDS = VGS, ID = 9.22 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 25 34 mΩ VGS = 15 V, ID = 33.5 A Fig. 4, 5,6 33 VGS = 15 V, ID = 33.5 A, TJ = 175ºC gfs Transconductance S VDS= 20 V, IDS= 33.5 A Fig. 7 24 VDS= 20 V, IDS= 33.5 A, TJ = 175ºC Ciss Input Capacitance 2980 pF VGS = 0 V, VDS = 0V to 600 V F = 1 Mhz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 178 Crss Reverse Transfer Capacitance 12 Co(er) Effective Output Capacitance (Energy Related) 236 VGS = 0 V, VDS = 0V to 400 V Note: 3 Co(tr) Effective Output Capacitance (Time Related) 340 Note: 3 Eoss Coss Stored Energy 37 μJ VDS = 600 V, F = 1 Mhz Fig. 16 EON Turn-On Switching Energy (Body Diode) 121 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 33.5 A, RG(ext) = 2.5 Ω, L= 59 μH, TJ = 175ºC FWD = Internal Body Diode of MOSFET Fig. 25 EOFF Turn Off Switching Energy (Body Diode) 53 EON Turn-On Switching Energy (External Diode) 73 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 33.5 A, RG(ext) = 2.5 Ω, L= 59 μH, TJ = 175ºC FWD = External SiC DIODE Fig. 25 EOFF Turn Off Switching Energy (External Diode) 82 td(on) Turn-On Delay Time 12 ns VDD = 400 V, VGS = -4 V/15 V ID = 33.5 A, RG(ext) = 2.5 Ω Timing relative to VDS Inductive load Fig. 26 tr Rise Time 18 td(off) Turn-Off Delay Time 25 tf Fall Time 8 RG(int) Internal Gate Resistance 1.3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 34 nC VDS = 400 V, VGS = -4 V/15 V ID = 33.5 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 33 Qg Total Gate Charge 112 Note (3): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V

Rev. 2, OCTOBER 2022 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 5.0 V VGS = -4 V, ISD = 16.8 A, TJ = 25 °C Fig. 8, 9, 10 4.5 V VGS = -4 V, ISD = 16.8 A, TJ = 175 °C IS Continuous Diode Forward Current 52 A VGS = -4 V, TC = 25˚C IS, pulse Diode pulse Current 251 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 16 ns VGS = -4 V, ISD = 33.5 A, VR = 400 V dif/dt = 5560 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 453 nC Irrm Peak Reverse Recovery Current 54 A trr Reverse Recover time 22 ns VGS = -4 V, ISD = 33.5 A, VR = 400 V dif/dt = 1575 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 293 nC Irrm Peak Reverse Recovery Current 22 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.46 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Rev. 2, OCTOBER 2022 E S 6.35 12.70 8.38 D L2 L1 L 4x b E3 E2 Q (3) POLISH A C c A X W T W B P 2x b3 PACKAGE BURR LOCATION 7.18 NOTE: ALL METAL SURFACES ARE TIN PLATED (MATTE), 1. EXCEPT AREA OF CUT. DIMENSIONING & TOLERANCING CONFORM TO ASME 2. Y14.5M-1994. ALL DIMENSIONS ARE LISTED IN MILLIMETERS. ANGLES 3. ARE IN DEGREES. BURR OR MOLD FLASH SIZE (0.5 mm) IS NOT INCLUDED 4. IN THE DIMENSIONS e1e1 e 1 2 3 4 0.1

0.25 M B A M

0.64 M A C B

SYMBOL MIN (mm) MAX (mm) A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.07 1.33 b1 2.39 2.94 b3 1.07 1.60 b5 2.39 2.69 b7 1.30 1.70 b8 1.80 2.20 c 0.55 0.68 D 23.30 23.60 D1 16.25 17.65 D2 0.95 1.25 E 15.75 16.13 E1 13.1 14.15 E2 3.68 5.10 E3 1.00 1.90 E4 12.38 13.43 e 2.54 BSC e1 5.08 BSC L 17.31 17.82 L1 3.97 4.37 L2 2.35 2.65 P 3.51 3.65 Q 5.49 6.00 S 6.04 6.30 T 17.5 REF. W 3.5 REF. X 4 REF.

1 DRAIN

2 SOURCE

3 DRIVER SOURCE

4 GATE

5 DRAIN

TITLE: REVISION NO. SCALE:1:1 SHEET 1 OF 1 A4Date: 05/05/22 01 PACKAGE OUTLINE DRAWING: TO-247-4L A A B B C C D D E E F F Package Dimensions

Rev. 2, OCTOBER 2022 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT . 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. 'N' IS THE NUMBER OF TERMINAL POSITIONS . 5. DIMENSION DO NOT INCLUDE BURR OR MOLD FLASH. MIN MILLIMETERS SYM MAX A b 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 1.07 1.60 1.07 1.50 1.80 2.20 2.39 2.39 2.94 2.84 2.39 2.39 2.69 2.64 b7 1.30 1.70 c D E e L øP Q S T W X 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43

2.54 BSC

17.31 17.82 3.97 4.37 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4° REF. e1 5.08 BSC L2 2.35 2.65 TITLE: SHEET COMPANY ASE WEIHAI

2 OF 3

DWG NO. TO-247 4LD 98W0004TO004 E Aug.04, 2020 ASE Advanced Semiconductor Engineering Weihai, Inc. Package Dimensions TO-247-4L Recommended Solder Pad Layout Recommended Solder Pad Layout

Rev. 2, OCTOBER 2022

Revision history

Document Version Date of release Descriptiion of changes

1.0 December-2020 Initial datasheet

2.0 October-2022 Wolfspeed Branding

Package Outline and Solder Pad Layout Diagrams Updated VGS note added

Rev. 2, OCTOBER 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Contact info:

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.wolfspeed.com/power Notes & Disclaimer This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Wolfspeed. No communication from any employee or agent of Wolfspeed or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Wolfspeed for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Wolfspeed. Notwithstanding any application-specific information, guidance, assistance, or support that Wolfspeed may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Documentation sections of www.wolfspeed. com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Wolfspeed representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.