C3M0021120K

C3M0021120K WOLFSPEED | Alldatasheet

Document overview

• Manufacturer or author: Wolfspeed Inc
• PDF pages: 12

Technical content

Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Applications

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency Maximum Ratings (TC = 25ºC unless otherwise specified) Parameter Symbol Value Unit Test Conditions Note Drain-Source Voltage VDS max 1200 V VGS = 0 V, ID = 100 μA Gate-Source Voltage (dynamic)1 VGS max -8/+19 AC (ƒ > 1 Hz) Gate-Source Voltage (static)2 VGS op -4/+15 Static Continuous Drain Current ID 100 A VGS = 15 V, TC = 25ºC Fig. 19

74 VGS = 15 V, TC = 100ºC

Pulsed Drain Current ID(pulsed) 200 Pulse width tP limited by Tj max Power Dissipation PD 469 W TC = 25ºC, TJ = 175ºC Fig. 20 Operating Junction and Storage Temperature TJ, Tstg -40 to +175 Solder Temperature TL 260 1.6mm (0.063”) from case for 10s Part Number Package Marking C3M0021120K TO 247-4 C3M0021120K Note:

1 When using MOSFET Body Diode VGS max = -4V/+19V

2 MOSFET can also safely operate at 0/+15 V

4 D S S G

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Rev. 1, March 2023 Electrical Characteristics (TC = 25 ˚ C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Note Drain-Source Breakdown Voltage V(BR)DSS 1200 — — V VGS = 0 V, ID = 100 μA Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 VDS = VGS, ID = 17.7 mA Fig. 11 — 2.0 — VDS = VGS, ID = 17.7 mA, TJ = 175°C Zero Gate Voltage Drain Current IDSS — 1 50 μA VDS = 1200 V, VGS = 0 V Gate-Source Leakage Current IGSS — 10 250 VGS = 15 V, VDS = 0 V Drain-Source On-State Resistance RDS(on) — 21 28.8 mΩ VGS = 15 V, ID = 50 A Fig. 4, 5, 6 — 38 — VGS = 15 V, ID = 50 A, TJ = 175°C Transconductance gfs — — S VDS = 20 V, IDS = 50 A Fig. 7

33 VDS = 20 V, IDS = 50 A, TJ = 175°C

Input Capacitance Ciss — 4818 — pF VGS = 0 V, VDS = 1000 V ƒ = 1 Mhz VAC = 25 mV Fig. 17, 18Output Capacitance Coss — 180 — Reverse Transfer Capacitance Crss — 12 — Coss Stored Energy Eoss — 99 — μJ Fig. 16 Turn-On Switching Energy (SiC Diode FWD) Eon — 0.69 — mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 50 A, RG(ext) = 2.5 Ω, L= 157 μH, TJ = 175ºC Fig. 26, 29 Turn Off Switching Energy (SiC Diode FWD) Eoff — 0.42 — Turn-On Switching Energy (Body Diode FWD) Eon — 1.58 — Turn Off Switching Energy (Body Diode FWD) Eoff – 0.34 — Turn-On Delay Time td(on) — 29 — ns VDD = 800 V, VGS = -4 V/15 V RG(ext) = 2.5 Ω, L = 157 μH Fig. 27 Rise Time tr — 33 — Turn-Off Delay Time td(off) — 57 — Fall Time tf — 14 — Internal Gate Resistance RG(int) — 3.3 — Ω ƒ = 1 MHz, VAC = 25 mV Gate to Source Charge Qgs — 49 — nC VDS = 800 V, VGS = -4 V/15 V ID = 50 A Per IEC60747-8-4 pg 21 Fig. 12Gate to Drain Charge Qgd — 50 — Total Gate Charge Qg — 162 —

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Rev. 1, March 2023 Thermal Characteristics Reverse Diode Characteristics (TC = 25 ˚ C unless otherwise specified) Parameter Symbol Typ. Max. Unit Test Conditions Notes Diode Forward Voltage VSD 4.6 — V VGS = -4 V, ISD = 25 A, TJ = 25°C Fig. 8, 9, 104.2 — VGS = -4 V, ISD = 25 A, TJ = 175°C Continuous Diode Forward Current1 IS — 90 A VGS = -4 V, TC = 25°C Diode Pulse Current1 IS, pulse — 200 VGS = -4 V, pulse width tP limited by Tj max Reverse Recovery Time1 trr 34 — ns VGS = -4 V, ISD = 50 A, VR = 800 V diF/dt = 2600 A/μs, TJ = 175°CReverse Recovery Charge1 Qrr 928 — nC Peak Reverse Recovery Current1 IRRM 42 — A Note: Parameter Symbol Typ. Unit Test Conditions Notes Thermal Resistance from Junction to Case RθJC 0.32 °C/W Fig. 21 Thermal Resistance from Junction to Ambient RθJA 40

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. Figure 29. Clamped Inductive Switching 1 Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Rev. 1, March 2023 Package Dimensions – Package TO-247-4L E S 6.35 12.70 8.38 D L2 L1 L 4x b E3 E2 Q (3) POLISH A C c A X W T W B P 2x b3 PACKAGE BURR LOCATION 7.18 NOTE: ALL METAL SURFACES ARE TIN PLATED (MATTE), 1. EXCEPT AREA OF CUT. DIMENSIONING & TOLERANCING CONFORM TO ASME 2. Y14.5M-1994. ALL DIMENSIONS ARE LISTED IN MILLIMETERS. ANGLES 3. ARE IN DEGREES. BURR OR MOLD FLASH SIZE (0.5 mm) IS NOT INCLUDED 4. IN THE DIMENSIONS e1e1 e 1 2 3 4 0.1

0.25 M B A M

0.64 M A C B

SYMBOL MIN (mm) MAX (mm) A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.07 1.33 b1 2.39 2.94 b3 1.07 1.60 b5 2.39 2.69 b7 1.30 1.70 b8 1.80 2.20 c 0.55 0.68 D 23.30 23.60 D1 16.25 17.65 D2 0.95 1.25 E 15.75 16.13 E1 13.1 14.15 E2 3.68 5.10 E3 1.00 1.90 E4 12.38 13.43 e 2.54 BSC e1 5.08 BSC L 17.31 17.82 L1 3.97 4.37 L2 2.35 2.65 P 3.51 3.65 Q 5.49 6.00 S 6.04 6.30 T 17.5 REF. W 3.5 REF. X 4 REF.

1 DRAIN

2 SOURCE

3 DRIVER SOURCE

4 GATE

5 DRAIN

TITLE: REVISION NO. SCALE:1:1 SHEET 1 OF 1 A4Date: 05/05/22 01 PACKAGE OUTLINE DRAWING: TO-247-4L A A B B C C D D E E F F

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Rev. 1, March 2023 Recommended Solder Pad Layout

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power Rev. 1, March 2023 Contact info:

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.wolfspeed.com/power Notes & Disclaimer This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Wolfspeed. No communication from any employee or agent of Wolfspeed or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Wolfspeed for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Wolfspeed. Notwithstanding any application-specific information, guidance, assistance, or support that Wolfspeed may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. The Silicon Carbide MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Documentation sections of www.wolfspeed.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Wolfspeed representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.