C3M0015065K WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • EV chargers
  • Solar inverters
  • UPS
  • SMPS
  • DC/DC converters Package Part Number Package Marking C3M0015065K TO 247-4 C3M0015065K Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4) Maximum Ratings (TC=25˚C, unless otherwise specified) Symbol Parameter Value Unit Note VDSmax Drain - Source Voltage 650 V VGSmax Gate - Source voltage -8/+19 V Note 1 ID Continuous Drain Current, VGS = 15 V, TC = 25˚C 120 A Fig. 19 Note 2Continuous Drain Current, VGS = 15 V, TC = 100˚C 96 ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 418 A PD Power Dissipation, TC=25˚C, TJ = 175 ˚C 416 W Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +175 ˚C TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in Note (1): Recommended turn off / turn on gate voltage VGS - 4V...0V / +15V Note (2): Package limited to 120 A C3M0015065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Rev. 6, March 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 650 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.3 3.6 V VDS = VGS, ID = 15.5 mA Fig. 11 1.9 V VDS = VGS, ID = 15.5 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 10.5 15 21 mΩ VGS = 15 V, ID = 55.8A Fig. 4, 5,6 20 VGS = 15 V, ID = 55.8A, TJ = 175ºC gfs Transconductance S VDS= 20 V, IDS= 55.8 A Fig. 7 40 VDS= 20 V, IDS= 55.8 A, TJ = 175ºC Ciss Input Capacitance 5011 pF VGS = 0 V, VDS = 400 V f = 100 Khz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 289 Crss Reverse Transfer Capacitance 31 Co(er) Effective Output Capacitance (Energy Related) 357 Note: 3 Co(tr) Effective Output Capacitance (Time Related) 516 Note: 3 Eoss Coss Stored Energy 29 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode) 401 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC FWD = Internal Body Diode of MOSFET Fig. 25 EOFF Turn Off Switching Energy (Body Diode) 254 EON Turn-On Switching Energy (External Diode) 234 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC FWD = External SiC DIODE Fig. 25 EOFF Turn Off Switching Energy (External Diode) 303 td(on) Turn-On Delay Time 23 ns VDD = 400 V, VGS = -4 V/15 V ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH Timing relative to VDS Inductive load Fig. 26 tr Rise Time 32 td(off ) Turn-Off Delay Time 57 tf Fall Time 15 RG(int) Internal Gate Resistance 1.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 53 nC VDS = 400 V, VGS = -4 V/15 V ID = 55.8 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 58 Qg Total Gate Charge 188 Note (3): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V

Rev. 6, March 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.7 V VGS = -4 V, ISD = 27.9 A, TJ = 25 °C Fig. 8, 9, 10 4.2 V VGS = -4 V, ISD = 27.9 A, TJ = 175 °C IS Continuous Diode Forward Current 79 A VGS = -4 V, TC = 25˚C IS, pulse Diode pulse Current 223 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 22 ns VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 510 nC Irrm Peak Reverse Recovery Current 39 A trr Reverse Recover time 26 ns VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 2500 A/µs, TJ = 175 °CQrr Reverse Recovery Charge 432 nC Irrm Peak Reverse Recovery Current 28 A Thermal Characteristics Symbol Parameter Typ. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.35 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Rev. 6, March 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Package Dimensions TO-247-4L BASE METAL SCALE: NONE TITLE: SHEET COMPANY ASE WEIHAI

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DWG NO. TO-247 4 LD 98W0004TO004 E Aug.04, 2020 ASE Advanced Semiconductor Engineering Weihai, Inc. Package Dimensions TO-247-4L

Rev. 6, March 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT . 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. 'N' IS THE NUMBER OF TERMINAL POSITIONS . 5. DIMENSION DO NOT INCLUDE BURR OR MOLD FLASH. MIN MILLIMETERS SYM MAX A b 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 1.07 1.60 1.07 1.50 1.80 2.20 2.39 2.39 2.94 2.84 2.39 2.39 2.69 2.64 b7 1.30 1.70 c D E e L øP Q S T W X 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43

2.54 BSC

17.31 17.82 3.97 4.37 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4° REF. e1 5.08 BSC L2 2.35 2.65 TITLE: SHEET COMPANY ASE WEIHAI

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DWG NO. TO-247 4LD 98W0004TO004 E Aug.04, 2020 ASE Advanced Semiconductor Engineering Weihai, Inc. Package Dimensions TO-247-4L Recommended Solder Pad Layout Package Dimensions TO-247-4L Recommended Solder Pad Layout

Rev. 6, March 2022 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. PATENT: https://www.wolfspeed.com/legal/patents The information in this document is subject to change without notice. Notes This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. Not withstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. . This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. For more information please contact:

4600 Silicon Drive Durham, NC 27703 USA

Tel: +1.919.313.5300 www.wolfspeed.com/power