C3D10065E WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • 650-Volt Schottky Rectifier
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies (SMPS)
  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter Stages
  • AC/DC converters Package TO-252-2 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V IF Continuous Forward Current A TC=25˚C TC=135˚C TC=153˚C Fig. 3 IFRM Repetitive Peak Forward Surge Current 43.5

28 A TC=25˚C, tP = 10 ms, Half Sine Wave

TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 90

71 A TC=25˚C, tp = 10 ms, Half Sine Wave

TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 860

680 A TC=25˚C, tP = 10 µs, Pulse

TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 150

65 W TC=25˚C

TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V ∫i2dt i2t value 40.5

25 A2s TC=25˚C, tP=10 ms

TC=110˚C, tP=10 ms TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C Part Number Package Marking C3D10065E TO-252-2 C3D10065 VRRM = 650 V IF (TC=135˚C) = 15 A Qc = 24 nC PIN 1 PIN 2 CASE

C3D10065E Rev. B, 01-2018 100Reverse Leakage Current, IRR (mA) TJ = 175 °C TJ = 125 °C TJ = 75 °C T = 25 °C 0 100 200 300 400 500 600 700 800 900 1000 Reverse Leakage Current, I Reverse Voltage, VR (V) TJ = -55 °C TJ = 25 °C

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8

2.4 V IF = 10 A TJ=25°C

IF = 10 A TJ=175°C Fig. 1 IR Reverse Current 12 220 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 24 nC VR = 400 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 460.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 3.6 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note RθJC Thermal Resistance from Junction to Case 1.0 °C/W Fig. 9 Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

Figure 7. Capacitance Stored Energy Figure 9. Transient Thermal Impedance

0.02 SinglePulse

Figure 8. Non-repetitive peak forward surge current

C3D10065E Rev. B, 01-2018 Recommended Solder Pad Layout Part Number Package Marking C3D10065E TO-252-2 C3D10065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering Package Dimensions Package TO-252-2 Tjb June 2015 MX+DI+PSI TO-252-2 SYMBOL MILLIMETERS MIN MAX A 2.159 2.413 A1 0 0.13 b 0.64 0.89 b2 0.653 1.143 b3 5.004 5.6 c 0.457 0.61 c2 0.457 0.864 D 5.867 6.248 D1 5.21 - E 6.35 7.341 E1 4.32 - e 4.58 BSC H 9.65 10.414 L 1.106 1.78 L2 0.51 BSC L3 0.889 1.27 L4 0.64 1.01 θ 0° 8° Tjb June 2015 MX+DI+PSI

C3D10065E Rev. B, 01-2018 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links Diode Model VT RT Diode Model CSD04060 Vf T = VT + If*RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VfT = VT + If * RT