C3D02060F WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • 600-Volt Schottky Rectifier
  • Optimized for PFC Boost Diode Application
  • Zero Forward and Reverse Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF
  • Fully Isolated Case Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • No Additional Isolation Required

Applications

  • Switch Mode Power Supplies (SMPS)
  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters Package TO-220-F2 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V IF Continuous Forward Current A TC=25˚C TC=125˚C TC=150˚C Fig. 3 IFRM Repetitive Peak Forward Surge Current 9

6 A TC=25˚C, tP=10 ms, Half Sine Wave

TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 15.5

13.5 A TC=25˚C, tP=10 ms, Half Sine Wave

TC=110˚C, tP=10 ms, Half Sine Wave Fig. 8 IFSM(Max) Non-Repetitive Peak Forward Surge Current 120

110 A TC=25˚C, tP=10 ms, Pulse

TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation 22.7

9.8 W TC=25˚C

TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V ∫i2dt i2t value 1.2

0.9 A2s TC=25˚C, tP=10 ms

TC=110˚C, tP=10 ms TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TO-220 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Part Number Package Marking C3D02060F TO-220-F2 C3D02060 VRRM = 600 V IF (TC=150˚C) = 2 A Qc = 5.8 nC PIN 1 PIN 2

C3D02060F Rev. G, 02-2019

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 1.8 1.7

2.4 V IF = 2 A TJ=25°C

IF = 2 A TJ=175°C Fig.1 IR Reverse Current 3 55 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 5.8 nC VR = 400 V, IF = 2A di/dt = 500 A/μS TJ = 25°C Fig. 5 C Total Capacitance 175 10.5 8.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 0.8 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note RθJC TO-220 Package Thermal Resistance from Junction to Case 6.6 °C/W Fig. 9 Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

C3D02060F Rev. G, 02-2019 Part Number Package Marking C3D02060F TO-220-F2 C3D02060 TO-220-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering Package Dimensions Package TO-220-F2 Recommended Solder Pad Layout SYMBOL MIN (mm) MAX (mm) A 4.30 4.93 A1 1.80 3.90 A2 2.34 2.90 b 0.40 0.91 b1 1.00 1.40 b2 0.56 0.93 b3 0.24 0.55 C 0.40 0.80 D 14.70 16.07 D1 2.50 TYP D2 2.66 TYP e 4.83 5.33 E 9.70 10.36 E1 7.00 TYP G 6.50 7.10 Ho 28 TYP L 12.10 13.50 L1 0.50 M 2.86 TYP ØP 2.98 3.40 Q 3.10 3.30 Q1 2.70 3.50 Θ 20° TYP Θ1 3° TYP Θ2 5° TYP PIN 1 PIN 2

C3D02060F Rev. G, 02-2019 Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links