2SC3866 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866
DESCRIPTION
- With TO-220Fa package
- High speed switching
- High voltage
- High reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 3 A IB Base current 1 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 3.0 /W Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V V(BR)CBO Collector-base breakdown voltage I C=1mA , IE=0 900 V V(BR)EBO Emitter-base breakdown voltage I E=1mA , IC=0 10 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=900V; IE=0 1.0 mA IEBO Emitter cut-off current V EB=10V; IC=0 1.0 mA hFE DC current gain I C=1A ; VCE=5V 10 Switching times ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150A Pw=20µs,DutyB2% 0.8 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866