2SC3832 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832
DESCRIPTION
- With TO-220C package
- High voltage
- High speed switching
APPLICATIONS
- For switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 2 A PC Collector dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.6A 1.3 V ICBO Collector cut-off current V CB=500V ;IE=0 100 µA IEBO Emitter cut-off current V EB=10V; IC=0 100 µA hFE DC current gain I C=3A ; VCE=4V 10 30 fT Transition frequency I C=0.5A ; VCE=12V 10 MHz COB Output capacitance f=1MHz ; V CB=10V 50 pF Switching times ton Turn-on time 1.0 µs tstg Storage time 3.0 µs tf Fall time VCC=200V; IC=3A IB1=0.3A;IB2=-0.6A; RL=66.7? 0.5 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3832