2SC3795B SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B
DESCRIPTION
- With TO-220F package
- High breakdown voltage
- Fast switching speed
- Low collector saturation voltage
APPLICATIONS
- For high voltalge ,high-speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 6 A IB Base current 3 A Ta=25 2 PC Collector dissipation TC=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.2A , L=25mH 600 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE-1 DC current gain I C=0.1A ; VCE=5V 15 hFE-2 DC current gain I C=3A ; VCE=5V 8 fT Transition frequency I C=0.5A ; VCE=10V 8 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B PACKAGE OUTLINE Fig.2 Outline dimensions