2SC3710 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710
DESCRIPTION
- With TO-220Fa package
- Complement to type 2SA1452
- Low collector saturation voltage
- High speed switching time
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A IB Base current 2 A PC Collector dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ;IB=0 80 V VCEsat Collector-emitter saturation voltage I C=6A;IB=0.3A 0.2 0.4 V VBEsat Base-emitter saturation voltage I C=6A;IB=0.3A 0.9 1.2 V ICBO Collector cut-off current V CB=80V; IE=0 10 µA IEBO Emitter cut-off current V EB=6V; IC=0 10 µA hFE-1 DC current gain I C=1A ; VCE=1V 70 240 hFE-2 DC current gain I C=6A ; VCE=1V 40 COB Output capacitance I E=0 ; VCB=10V, f=1MHz 220 pF fT Transition frequency I C=1A ; VCE=5V 80 MHz Switching times ton Turn-on time 0.2 µs ts Storage time 1.0 µs tf Fall time IB1=-IB2=0.3A VCCB30V ,RL=5C 0.2 µs hFE-1 Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710 PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710