2SC3457 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3457
DESCRIPTION
- With TO-220C package
- High breakdown voltage and high reliability
- Fast switching speed.
- Wide ASO (Safe Operating Area)
APPLICATIONS
- 800V/3A switching regulator applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 10 A IB Base current 1.5 A PC Collector dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3457 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ; RBE=: 800 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IB=0 7 V VCEsat Collector-emitter saturation voltage I C=1.5A; IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage I C=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current V CB=800V ;IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=0.2A ; VCE=5V 10 40 hFE-2 DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.2A ; VCE=10V 15 MHz COB Output capacitance f=1MHz ; V CB=10V 60 pF Switching times ton Turn-on time 0.5 µs tstg Storage time 3.0 µs tf Fall time VCC=400V; IC=2A IB1=0.4A;IB2=-0.8A; RL=200B 0.3 µs hFE-1 classifications K L M 10-20 15-30 20-40
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3457 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3457