2SC3258 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258
DESCRIPTION
- With TO-220 package
- Complement to type 2SA1293
- Low collector saturation voltage
- High speed switching time
APPLICATIONS
- High current switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector- emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-Peak 8 A IB Base current 1 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector -emitter breakdown voltage I C=10mA ,IB=0 80 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.15A 1.2 V ICBO Collector cut-off current V CB=100V; IE=0 1 µA IEBO Emitter cut-off current V EB=7V; IC=0 1 µA hFE-1 DC current gain I C=1A ; VCE=1V 70 240 hFE-2 DC current gain I C=3A ; VCE=1V 40 Cob Output capacitance I E=0 ; VCB=10V;f=1MHz 80 pF fT Transition frequency I C=1A ; VCE=4V 120 MHz Switching times ton Turn-on time 0.2 µs ts Storage time 1.0 µs tf Fall time IC=3.0A IB1=- IB2=0.15A RL=10A;VCCB30V 0.1 µs hFE-1 Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258