KTC3205 HOTTECH | Alldatasheet

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1 /4©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com BIPOLAR TRANSISTOR (NPN)

FEATURES

 ComplementarytoKTA1273  HighCurrentApplication  SurfaceMountdevice SOT-89 MECHANICALDATA  Case:SOT-89  CaseMaterial:MoldedPlastic.ULflammability  ClassificationRating:94V-0  MoistureSensitivity:Level1perJ-STD-020  Weight:0.055grams(approximate) MAXIMUM RATINGS(TA =25°Cunlessotherwisenoted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-EmitterVoltage VCEO 30 V Emitter-BaseVoltage VEBO 5 V CollectorCurrent IC 2 A Collector Power Dissipation PC 500 mW JunctionTemperature TJ 150 °C Storage Temperature TSTG -55~+150 °C ELECTRICAL CHARACTERISTICS (TA =25°Cunlessotherwisespecified) Parameter Symbol Min Typ Ma x Unit Conditions Collector-base breakdown voltage V(BR)CBO 30 V IC=1mA，IE=0 Collector-emitter breakdown voltage V(BR)CEO 30 V IC=10mA，IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=1mA，IC=0 Collector cut-off current ICBO 0.1 uA VCB=30V, IE=0 Emitter cut-off current IEBO 0.1 uA VEB=5V, IC=0 DCcurrentgain hFE 100 320 VCE=2V, IC=500mA Collector-emittersaturationvoltage VCE(sat) 2 V IC=1.5A，IB=30mA Base-emittervoltage VBE 1 V VCE=2V,IC=500mA Transitionfrequency fT 120 MHz VCE=6V, IC=500mA Collectoroutput capacitance Cob 13 pF VCB=10V, IE=0,f=1MHz CLASSIFICATIONOF hFE Rank O Y Range 100-200 160-320 Marking 3205

©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt heketai.com BIPOLAR TRANSISTOR (NPN) Typical Characteristics 0.1 1 10 100 1000 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 100 1000 0.1 1 10 100 1 10 100 1000 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 0 1 2 3 4 5 6 7 80.0 0.5 1.0 1.5 2.0 1 10 100 1000 100 200 2000 β=50 Ta=25℃ Ta=100℃ 500 2000 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ Ta=100℃ β=50 ICVBEsat —— VCE=2V Ta=25℃ Ta=100 o C BASE-EMITTER VOLTAGE VBE(V) COLLECTOR CURRENT IC (mA) VBE —— IC 2000 f=1MHz IE=0 / IC=0 Ta=25 o C Cob Cib VCB / VEBCob / Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) 2000 Ta=25 o C DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100 o C VCE=2V IChFE —— COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.0mA I B =0.5mA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCEsat —— IC

3 /4©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com BIPOLAR TRANSISTOR (NPN) SOT-89 PackageOutlineDimensions Symbol DimensionsInMillimeters DimensionsInInches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89SuggestedPadLayout Note: 1.Controllingdimension:inmillimeters 2.Generaltolerance:±0.05mm 3.Thepadlayoutisforreferencepurposesonly

4 /4©GUANGDONGHOTTECHINDUSTRIALCO.,LTD E-mail:hkt@heketai.com BIPOLAR TRANSISTOR (NPN) SOT-89Tape and Reel SOT-89EmbossedCarrierTape SOT-89TapeLeaderandTrailer SOT-89 Reel DIMENSIONSARE IN MILLIMETER TYPE A B C d E F P0 P P1 W DIMENSIONSARE IN MILLIMETER REEL OPTION D D1 D2 G H I W1 W2