2SC3012 SAVANTIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012
DESCRIPTION
- With TO-3PN package
- Complement to type 2SA1232
- High transition frequency
APPLICATIONS
- Audio frequency power amplifier. PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 130 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=5A; IB=0.5A 0.6 1.5 V VBEsat Base-emitter saturation voltage I C=5A; IB=0.5A 1.3 2.0 V ICBO Collector cut-off current V CB=130V; IE=0 50 µA IEBO Emitter cut-off current V EB=3V; IC=0 50 µA hFE-1 DC current gain I C=2A ; VCE=5V 60 320 hFE-2 DC current gain I C=5A ; VCE=5V 40 Cob Output capacitance I E=0 ; VCB=10V;f=1MHz 150 pF fT Transition frequency I C=1A ; VCE=5V 60 MHz hFE-1 Classifications R Q P 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)