C2M60-28 ASI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 60 V BV CEO IC = 50 mA 33 V BV EBO IE = 20 mA 4.0 V ICBO VCB = 30 V 5.0 mA hFE VCE = 5.0 V IC = 1.0 A 20 120 --- C OB VCB = 28 V f = 1.0 MHz 75 pF PG ηηηηC VCC = 28 V POUT = 70 W f = 400 MHz9.0 10.0 dB NPN SILICON RF POWER TRANSISTOR C2M60-28 PACKAGE STYLE .500”6L FLG ORDER CODE: ASI10799 DESCRIPTION: The C2M60-28 is Designed for Class A, B and C Power Amplifier Applications in Military UHF Radios. FEATURES:

  • PG = 10 dB Typical at 70 W/400 MHz
  • ∞∞∞∞ Load VSWR at Rated Conditions
  • Omnigold ™ Metallization System MAXIMUM RATINGS IC 8.0 A VCB 60 V PDISS 220 W @ TC = 25 O C TJ -55 O C to +200 O C TSTG -55 O C to +200 O C θθθθJC 0.8 O C/W MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97 C B EE EE