C2M1000170D

C2M1000170D WOLFSPEED | Alldatasheet

Document overview

• Manufacturer or author: Edgar Ayerbe
• PDF pages: 11

Technical content

Features

• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low RDS(on)
• Easy to Parallel and Simple to Drive
• Ultra-low Drain-gate capacitance
• Halogen Free, RoHS Compliant Benefits
• Higher System Efficiency
• Increased System Switching Frequency
• Reduced Cooling Requirements
• Increased System Reliability

Applications

• Auxiliary Power Supplies
• Switch Mode Power Supplies
• High-voltage Capacitive Loads Package TO-247-3 VDS 1700 V I D @ 25˚C 5.0 A RDS(on) 1.0 Ω C2M1000170D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current 5.0 A VGS = 20 V, TC = 25˚C Fig. 19

3.5 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 15 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 69 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw Ordering Part Number Package Marking C2M1000170D TO-247-3 C2M1000170

C2M1000170D Rev. 9, 06-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.8 4 V VDS = VGS, ID = 0.5 mA Fig. 11 2.4 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 0.80 1.4 Ω VGS = 20 V, ID = 2 A Fig. 4,5,6

1.4 VGS = 20 V, ID = 2 A, TJ = 150 °C

1.04 S VDS= 20 V, IDS= 2 A Fig. 7

1.09 VDS= 20 V, IDS= 2 A, TJ = 150 °C

Ciss Input Capacitance 215 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17,18Coss Output Capacitance 19 Crss Reverse Transfer Capacitance 2.2 Eoss Coss Stored Energy 10.2 μJ Fig 16 EON Turn-On Switching Energy 89 μJ VDS = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 Ω, L= 1478 μH, TJ = 150 °C Fig. 26 EOFF Turn Off Switching Energy 14 td(on) Turn-On Delay Time 5 ns VDD = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 Ω, RL = 600 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 tr Rise Time 19 td(off) Turn-Off Delay Time 14 tf Fall Time 63 RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4 nC VDS = 1.2 kV, VGS = -5/20 V ID = 2 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 12 Qg Total Gate Charge 22 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.8 V VGS = - 5 V, ISD = 1 A, TJ = 25 °C Fig. 8, 9,

103.3 V VGS = - 5 V, ISD = 1 A, TJ = 150 °C

IS Continuous Diode Forward Current 4 A TC= 25 °C Note 1 trr Reverse Recovery Time 30 ns VGS = - 5 V, ISD = 2 A TJ = 150 °C VR = 1.2 kV dif/dt = 1135 A/µs Note 1Qrr Reverse Recovery Charge 31 nC Irrm Peak Reverse Recovery Current 3 A Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.7 1.8 °C/W Fig. 21 RθJA Thermal Resistance from Junction to Ambient 40

Figure 29. Clamped Inductive Switching

C2M1000170D Rev. 9, 06-2021 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 5. DIMENSION DO NOT INCLUDE BURR OR MOLD FLASH. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: SHEET COMPANY ASE WEIHAI

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DWG NO. 98WHP03165A A Aug.04, 2020 TO-247 3LD ASE Advanced Semiconductor Engineering Weihai, Inc. 1 2 3 Package Dimensions Package TO-247-3

C2M1000170D Rev. 9, 06-2021 Recommended Solder Pad Layout TO-247-3 A b c D E e N L Q S T W X 4.83 5.21 .190 .205 2.29 2.54 .090 .100 1.91 2.16 .075 .085 1.07 1.33 .042 .052 1.91 2.41 .075 .095 2.87 3.38 .113 .133 0.55 0.68 .022 .027 20.80 21.10 .819 .831 16.25 17.65 .640 .695 0.95 1.25 .037 .049 15.75 16.13 .620 .635 13.10 14.15 .516 .557 3.68 5.10 .145 .201 1.00 1.90 .039 .075 12.38 13.43 .487 .529 5.44 BSC .214 BSC 3 3 19.81 20.32 .780 .800 4.10 4.40 .161 .173 3.51 3.65 .138 .144 5.49 6.00 .216 .236 6.04 6.30 .238 .248 17.5° REF. 3.5° REF. 4° REF. TITLE: SHEET COMPANY ASE WEIHAI

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DWG NO. 98WHP03165A A Aug.04, 2020 TO-247 3LD ASE Advanced Semiconductor Engineering Weihai, Inc. Package Dimensions Package TO-247-3

C2M1000170D Rev. 9, 06-2021 Copyright © 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Notes

• RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links
• C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
• SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
• SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support
• 60W Auxiliary power supply reference design: http:/ /wolfspeed.com/power/tools-and-support