C2M0160120D WOLFSPEED | Alldatasheet

Document overview

  • Manufacturer or author: Edgar Ayerbe
  • PDF pages: 10

Technical content

Features

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • LED Lighting Power Supplies Package TO-247-3 Part Number Package C2M0160120D TO-247-3 VDS 1200 V I D @ 25˚C 18 A RDS(on) 160 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Fig. 19

12 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 40 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 125 W TC=25˚C , TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw

C2M0160120D Rev. 5, 04-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.9 4 V VDS = VGS, IDS = 2.5 mA Fig. 11 2.4 V VDS = VGS, IDS = 2.5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 160 196 mΩ VGS = 20 V, ID = 10 A Fig. 4, 5, 6

290 VGS = 20 V, ID = 10A, TJ = 150ºC

3.8 S VDS= 20 V, IDS= 10 A Fig. 7

5.3 VDS= 20 V, IDS= 10 A, TJ = 150ºC

Ciss Input Capacitance 606 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 55 Crss Reverse Transfer Capacitance 5 Eoss Coss Stored Energy 28 μJ Fig. 16 EAS Avalanche Energy, Single Pluse 600 mJ ID = 10A, VDD = 50V Fig. 29 EON Turn-On Switching Energy 121 μJ VDS = 800 V, VGS = -5/20 V, ID = 10A, RG(ext) = 2.5Ω, L= 434μH Fig. 25 EOFF Turn Off Switching Energy 48 td(on) Turn-On Delay Time 7 ns VDD = 800 V, VGS = -5/20 V ID = 10 A RG(ext) = 2.5 Ω, RL = 80 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 tr Rise Time 9 td(off) Turn-Off Delay Time 13 tf Fall Time 14 RG(int) Internal Gate Resistance 6.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 11 nC VDS = 800 V, VGS = -5/20 V ID = 10 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 17 Qg Total Gate Charge 40 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.9 V VGS = -5 V, IF=5 A Fig. 8,9, 10

3.5 VGS = -5V, IF=5 A, TJ = 150 ºC

IS Continuous Diode Forward Current 25 A TC = 25˚C Note 1 trr Reverse Recovery Time 20 ns VGS = - 5 V, ISD = 10 A, VR = 800 V dif/dt = 2400 A/µs Note 1Qrr Reverse Recovery Charge 192 nC Irrm Peak Reverse Recovery Current 16 A Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.9 1.0 K/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

C2M0160120D Rev. 5, 04-2021 Part Number Package Marking C2M0160120D TO-247-3 C2M0160120

C2M0160120D Rev. 5, 04-2021 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support