C2M0040120D WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC converters
  • Battery Chargers
  • Motor Drives
  • Pulsed Power Applications Package TO-247-3 Part Number Package Marking C2M0040120D TO-247-3 C2M0040120 VDS 1200 V I D @ 25˚C 55 A RDS(on) 40 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Fig. 19

36 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 278 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw

C2M0040120D Rev. 3, 04-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 3.2 4 V VDS = VGS , ID = 10mA Fig. 11

2.4 V VDS = VGS , ID = 10mA,TJ = 150 °C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 44 52 mΩ VGS = 20 V, ID = 40 A Fig. 4,5,682 VGS = 20 V, ID = 40 A, TJ = 150 °C gfs Transconductance 18.2 S VDS= 20 V, IDS= 40 A Fig. 7

17.2 VDS= 20 V, IDS= 40 A, TJ = 150 °C

Ciss Input Capacitance 2440 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17,18Coss Output Capacitance 171 Crss Reverse Transfer Capacitance 11 Eoss Coss Stored Energy 89 μJ Fig 16 EON Turn-On Switching Energy (Body Diode) 1.7 mJ VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μH Fig. 25 EOFF Turn Off Switching Energy (Body Diode) 0.4 EON Turn-On Switching Energy (External SiC Diode) 1.3 VDS = 800 V, VGS = -5/20 V ID = 40A, RG(ext) = 2.5Ω, L= 99 μHEOFF Turn Off Switching Energy (External SiC Diode) 0.4 td(on) Turn-On Delay Time 13 ns VDD = 800 V, VGS = -5/20 V ID = 40 A RG(ext) = 2.5 Ω, RL = 20 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 tr Rise Time 61 td(off) Turn-Off Delay Time 25 tf Fall Time 13 RG(int) Internal Gate Resistance 1.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 34 nC VDS = 800 V, VGS = -5/20 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 42 Qg Total Gate Charge 120

C2M0040120D Rev. 3, 04-2021 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.0 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C Fig. 8, 9,

103.6 V VGS = - 5 V, ISD = 20 A, TJ = 150 °C

IS Continuous Diode Forward Current 60 A TC= 25 °C Note 1 IS, pulse Diode Pulse Current 160 A VGS = - 5 V, Pulse width tP limited by Tjmax trr Reverse Recovery Time 54 ns VGS = - 5 V, ISD = 40 A TJ = 25 °C VR = 800 V dif/dt = 1000 A/µs Note 1Qrr Reverse Recovery Charge 283 nC Irrm Peak Reverse Recovery Current 15 A Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.33 0.45 °C/W Fig. 21 RθJC Thermal Resistance from Junction to Ambient 40

Figure 29. Clamped Inductive Switching

C2M0040120D Rev. 3, 04-2021 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV A b c D E e N L P Q S T W X 4.83 5.21 .190 .205 2.29 2.54 .090 .100 1.91 2.16 .075 .085 1.07 1.33 .042 .052 1.91 2.41 .075 .095 2.87 3.38 .113 .133 0.55 0.68 .022 .027 20.80 21.10 .819 .831 16.25 17.65 .640 .695 0.95 1.25 .037 .049 15.75 16.13 .620 .635 13.10 14.15 .516 .557 3.68 5.10 .145 .201 1.00 1.90 .039 .075 12.38 13.43 .487 .529 5.44 BSC .214 BSC 19.81 20.32 .780 .800 4.10 4.40 .161 .173 3.51 3.65 .138 .144 5.49 6.00 .216 .236 6.04 6.30 .238 .248 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. 98WHP03165A O Sep.05, 2016 TO-247 3LD, Only For Cree 1 2 3

C2M0040120D Rev. 3, 04-2021 Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support