2SC2904 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 50 V BVCEO IC = 100 mA 20 BVEBO IE = 20 mA 4.0 V ICBO VCB = 15 V 5.0 mA IEBO VCB = 3.0 V 5.0 mA hFE* VCE = 10 V IC = 1.0 A 10 180 --- PO ηC VCE = 12.5 V PIN = 7.0 W f = 30 MHz 100 110 W NOTE: *Pulse test, PW=150µS. duty=5% NPN SILICON RF POWER TRANSISTOR 2SC2904 DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES:
- Internal Input Matching Network
- PG = 11.5 dB at 1000 W/30 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 22 A VCBO 50 V VCEO 20 V VEBO 4.0 V PDISS 200 W @ TC = 25 °C TJ -55 °C to +175 °C TSTG -55 °C to +175 °C θJC 0.75 °C/W PACKAGE STYLE .500 6L FLG Common Emitter configuration MINIMUM inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 B C D E F G A MAXIMUM .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 H DIM K L I J .970 / 24.64 .980 / 24.89 .170 / 4.32 N M .125 / 3.18 .285 / 7.24 .150 / 3.81 .045 / 1.14 E F .725/18,42 I G J K L M A D C B 2x ØN FULL R H .835 / 21.21 .865 / 21.97