2SC2810 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION ··Wit With TO-220C package
- High voltage,High speed
APPLICATIONS
- For power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.6A 1.3 V ICBO Collector cut-off current V CB=500V ;IE=0 10 µA IEBO Emitter cut-off current V EB=7V; IC=0 10 µA hFE DC current gain I C=3A ; VCE=4V 10 fT Transition frequency I C=0.5A ; VCE=12V 18 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)