C2611 TEL | Alldatasheet
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Technical content
TO-251 Plastic-Encapsulated Transistors C 2611 TRANSISTOR (NPN)
FEATURES
P CM: 1 W ( T a mb = 2 5 ℃) Collector current I CM: 0 . 2 A Collector-base voltage V (BR)CBO: 6 0 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA, I E=0 600 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO I E= 100µA, IC=0 7 V Collector cut-off current ICBO V CB= 600V, IE=0 100 µA Collector cut-off current ICEO V CE= 400V, IB=0 200 µA Emitter cut-off current IEBO V EB= 7V, I C=0 100 µA hFE(1) V CE= 20V, IC= 20mA 10 40 DC current gain hFE(2) V CE= 10V, IC= 0.25 mA 5 Collector-emitter saturation voltage VCE(sat) I C= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) I C= 50 mA, IB= 10mA 1.2 V Transition frequency f T VCE= 20 V, IC=20mA f = 1MHz
8 MHz
Fall time t f 0.3 µs Storage time t S IC=50mA, IB1=-IB2=5mA, VCC=45V 1.5 µs CLASSIFICATION OF h FE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO-251 1. EMITTER 2. COLLECTOR 3. BASE Transys Electronics LI M ITE D