2SC2579 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579
DESCRIPTION
- With TO-3PN package
- High power dissipation
- High current capability
APPLICATIONS
- For audio frequency power amplifier
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=5mA; IE=0 160 V V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;RBE=9 160 V V(BR)EBO Emitter-base breakdown voltage I E=5mA ; IC=0 6 V ICBO Collector cut-off current V CB=160V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=6V; IC=0 0.1 mA hFE DC current gain I C=3A ; VCE=4V 50 VCE(sat) Collector-emitter saturation voltage I C=5A ; IB=0.5A 2.0 V fT Transition frequency I C=0.5A ; VCE=10V 20 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)