2SC2542 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2542
DESCRIPTION
- High voltage ,high speed switching
- High reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A IB Base current 1.5 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -45~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 3.0 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2542 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage I E=0.1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage I C=2A; IB=0.4A 1.2 V VBE(sat) Base-emitter saturation voltage I C=2A; IB=0.4A 1.5 V ICBO Collector cut-off current V CB=450V ;IE=0 1.0 mA IEBO Emitter cut-off current V EB=7V; IC=0 0.1 mA hFE DC current gain I C=2 A ; VCE=5V 10 Switching times ton Turn-on time 1.0 µs ts Storage time 2.0 µs tf Fall time IC=4A; IB1=0.8A IB2=-0.8A;RL=20A 1.0 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2542 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2542