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RapidSwitchingEmitterControlledDiode IDW20C65D2 EmitterControlledDiodeRapid2CommonCathodeSeries Datasheet IndustrialPowerControl

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 RapidSwitchingEmitterControlledDiode Features:

  • QualifiedaccordingtoJEDECfortargetapplications
  • 650VEmitterControlledtechnology
  • Fastrecovery
  • Softswitching
  • Lowreverserecoverycharge(Qrr)
  • Lowforwardvoltage(VF)andstableovertemperature
  • 175°Cjunctionoperatingtemperature
  • Easyparalleling
  • Pb-freeleadplating
  • RoHScompliant Applications:
  • BoostdiodeinCCMPFC Packagepindefinition:
  • Pin1-anode(A1)
  • Pin2andbackside-cathode(C)
  • Pin3-anode(A2) A1C1C2A2 A1 A2 C 1 2 3 Key Performance and Package Parameters Type Vrrm If Vf, Tvj=25°C Tvjmax Marking Package IDW20C65D2 650V 2x 10A 1.6V 175°C C20ED2 PG-TO247-3

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 Table of Contents

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 Maximum Ratings (per leg) For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A Diode surge non repetitive forward current TC=25°C,tp=8.3ms,sinehalfwave IFSM 60.0 A PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 68.0 34.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm Thermal Resistances (per leg) Parameter Symbol Conditions Max. Value Unit Characteristic Diode thermal resistance,1) junction - case Rth(j-c) 2.20 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified Value min. typ. max. Parameter Symbol Conditions Unit Static Characteristic Diode forward voltage VF IF=10.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.60 1.65 1.65 2.20 V Reverse leakage current2) IR VR=650V Tvj=25°C Tvj=175°C 400.0 40.0 µA Electrical Characteristic, at Tvj = 25°C, unless otherwise specified Value min. typ. max. Parameter Symbol Conditions Unit Dynamic Characteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH 1)Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached. 2) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 Switching Characteristics (per leg), Inductive Load Value min. typ. max. Parameter Symbol Conditions Unit Diode Characteristic, at Tvj = 25°C Diode reverse recovery time trr - 30 - ns Diode reverse recovery charge Qrr - 0.16 - µC Diode peak reverse recovery current Irrm - 8.6 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -740 - A/µs Tvj=25°C, VR=400V, IF=10.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. Diode reverse recovery time trr - 50 - ns Diode reverse recovery charge Qrr - 0.13 - µC Diode peak reverse recovery current Irrm - 4.3 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -130 - A/µs Tvj=25°C, VR=400V, IF=10.0A, diF/dt=350A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. Switching Characteristics (per leg), Inductive Load Value min. typ. max. Parameter Symbol Conditions Unit Diode Characteristic, at Tvj = 175°C/125°C Diode reverse recovery time trr - 36 - ns Diode reverse recovery charge Qrr - 0.23 - µC Diode peak reverse recovery current Irrm - 10.6 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -680 - A/µs Tvj=175°C, VR=400V, IF=10.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. Diode reverse recovery time trr - 54 - ns Diode reverse recovery charge Qrr - 0.16 - µC Diode peak reverse recovery current Irrm - 5.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -190 - A/µs Tvj=125°C, VR=400V, IF=10.0A, diF/dt=350A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5.

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 PG-TO247-3

EmitterControlledDiodeRapid2CommonCathodeSeries Rev.2.1,2014-12-09 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Qa Qb V (t)CE VGE(t) I (t)C V (t)CE

Emitter Controlled Diode Rapid 2 Common Cathode Series Rev. 2.1, 2014-12-09

Revision History

Revision: 2014-12-09, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-12-02 Preliminary data sheet 2.1 2014-12-09 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.