2SC2027 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2027
DESCRIPTION
- ·With TO-3 package
- High voltage ,high speed
APPLICATIONS
- For high voltage ,power switching and TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 7.5 A PT Total power dissipation T C=25 50 W Tj Junction temperature 175 Tstg Storage temperature -65~200 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2027 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 800 V V(BR)EBO Emitter-base breakdown votage I E=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=4.0 A;IB=1.3 A 5.0 V VBEsat Base-emitter saturation voltage I C=4.0 A;IB=1.3 A 1.5 V ICBO Collector cut-off current V CB=600V;IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=1A ; VCE=5V 8 36 hFE-2 DC current gain I C=4.5A ; VCE=5V 2.25
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2027 PACKAGE OUTLINE Fig.2 Outline dimensions