C1874 MICRO-ELECTRONICS | Alldatasheet
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Technical content
5 NPN
4 SILICON |
TRANSISTOR | ett DESCRIPTION ‘ CASE T0-92F C1874 is NPN silicon planar epitaxial . transistor for use in AF driver and output stages. | CEB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (VEB=0) VCEO 45V Collector-Emitter Voltage (IB=0) VCES 50V Emitter-Base Voltage VEBO SV Collector Current Ic 800mA Continuous Power Dissipation Pd 625mW Operating & Storage Junction Temperature Tj, Tstg -55 to +150°C
2.0 Prot “vs Th 250 Hre vs Ic
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(-) 50 100 150 200 1 10 100 1000 Ta (°C) Ic (mA) | ME} MICRO ELECTRONICS LTD. ’ iy, 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowioon, Hong Kong. eee
‘ , ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) PARAMETER SYMBOL | won vyP MAX UNIT | TEST CONDITIONS, Yue Collector-Emitter Breakdown Voltage |BVcES 50 v Ig=0.lmA VBE=0 collector-Bmitter Breakdown Voltage |LVcko *| 45 v Ic=10mA ps0 mitter-Base Breakdown Voltage BVEBO 5 v Ig=0.1lmA Ic=0 Collector Cutoff Current Ices 100 | nA | Vcgs=45V nA | Vogs=25V 10 | pA | Vous=45V Ta=125° pA | Vops=25V Ta=125°C) Collector-Emitter Saturation Voltage|VcE(sat)* 0.5} V I¢=500mA Ip=]0mA Base-Emitter Voltage Vpp * 1.2) V Ic=300mA VCE=1V D.C. Current Gain Hre * Ig=100mA Vop=1V 100 250
40 Tg=300mA Vog=1¥
Current Gain-Bandwidth Product fp 100 MHz |Ic=10mA Vcp=5V Collector-Base Capacitance Cob 10 pF |Vcp=l0V Ig=0 f=1Mqz . * Pulse Test : Pulse Width-0.3mS, Duty Cycle=l% : SS