C150P

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1300 VOLTS 110 ARMS

The General Electric C150 and C152 Silicon Controlled Rectifiers are de- Wi signed for phase control applications. These are all-diffused, Pic-Pac devices c150 Wy employing the field-proven amplifying gate. Vi FEATURES: G7 ran © High di/dt Rating Wa 6 CS) © High dv/dt Capability with Selections Available NS © Excellent Surge and I°t Ratings Providing Easy Fusing IW ES cise © Rugged Hermetic Package with Long Creepage Path ASN S MAXIMUM ALLOWABLE RATINGS ae. ae ae TYPE VOLTAGE, Vorm! VOLTAGE, Vaan! REVERSE VOLTAGE, Vasu! Ty = -40°C to #125°C Ty = -40°C to +125°C Ty = +125°C C150, C152E 500 Volts 500 Volts 600 Volts C150, C152M 600 600 720 C150, C1528 700 700 850 C150, C152N 800 800 950 C150, C152T 900 900 1075 C150, C152P 1000 1000 1200 C150, C152PA 1100 1100 1325 C150, C152PB 1200 1200 1450 C150, C152PC 1300 1300 1550 1 Half sinewave waveform, 10 msec, max. pulse width, RMS On-State Current, Irqqas)- ++. ee obec eee cece eeeeeee cess. 100 Amperes (All Conduction Angles) Average On-State Current, SO Depends on Conduction Angle (See Charts 1 and 4) Peak One-Cycle Surge (Non-Repetitive) On-State Current, Ipgyy (50 Hz)... eee eee eee ee 1400 Amperes Critical Rate-of-Rise of On-State Current (Repetitive)* 2. see eee eee eee. 500 Afus Average Gate Power Dissipation, Poayy -. 2-6. ee eee eee eee watts Storage Temperature, Ty, Pec eee eee eee es 140°C to #150°C Operating Temperature, Tyo. - 0. oer eee dO to 425°C | Sud Tongue eee ee ee eee eee eee eee eee ee e125 Lbscln. (Min) — 150 Lbs-In, (Max) 14.N-m (Min.) — 17 N-m (Max,) “di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of VprM stated above; 20 volts, 20 ohms gate trigger source with 0.5 flsec short circuit trigger current rise time, 818

C150, C152 CHARACTERISTICS [test svmeor] min, [ve [ max. [ unims [Test conpitions | Repetitive Peak Reverse IprM mA Ty = +25°C and Off-State Current and IRRM Vprm = VrrM = 150, C152E | - | 3 | 10 | 500 Volts Peak C150, cis2M ee 150, C1528 ee C150, C152N [fos 10] C150, Cis Paps te 0 C150, C1530 es C150, CISPR a C150, C152P8 oss] C150, C152PC p- [3 tos | 1300 Repetitive Peak Reverse IpRM mA | Ty = +125°C and Off-State Current and IRRM Vprm = VrrM C150, C1S2E | — | is | 20 | 500 Volts Peak C150, Cis2M ee C150, C183 [ps [30] C130, C152P = [20] 7000 C150, C152PA Daas pe} [0 €150, C1525 ee ee 1200 C150, C153°C [os a | 1300 Critical Rate-of-Rise of dv/dt 200 500 Viusec | Ty = +125°C, Rated Vprm, Using Linear Off-State Voltage Exponential Rising Waveform. Gate Open (Higher values may Circuited. VprM cause device switching) Exponential dv/dt = ——_(.632) Higher minimum dv/dt selections available — consult factory. Holding Current 20 | soo | mAdc | Te = +25°C, Anode Supply = 24 Vdc. Initial Forward Current = 2 Amps. Turn-On Delay Time usec | Te = +25°C, Ip = 50 Adc, Vprm = Rated. Gate Supply: 10 Volt Open Circuit, 20 Ohm, 0.1 sec max. rise time Gate Pulse Width 10 usec | Tc = +25°C. Gate Supply: 20 Volt Open Necessary to Trigger Circuit, 40 Ohm, 0.5 usec rise time. Ip = 1.0 Amps. for High di/dt Capability. See Chart 9. DC Gate Trigger Current Tor | — | 50 | 150 | made | Te = 425°C, Vp = 6 Vdc, Ri = 3 Ohms | = | 75 | 200 | Te = -40°C, Vp = 6 Vde, Ry = 3 Ohms ee ee ee To = +125°C, Vp = 6 Vdc, Ry = 3 Ohms DC Gate Trigger Voltage | Vor 1.25 | 3.0 vac | Te = -40°C to +120°C, Vp = 6 Vdc, Ry = 3 Ohms fois | - | - | Te =+125°C, Vp = Rated, Ry = 1000 Ohms Peak On-State Voltage Vim - 2.0 | 2.6 | Volts | Tc = +25°C, Irm = 500 Amps. Peak. Duty Cycle < 0.01% Circuit Commutated ta i usec | (1) Ty = +125°C Turn-Off Time (2) Ipm = 50 Amps (3) Vp = 50 Volts Min. (4) Vor (Reapplied) = Rated (5) Rate-of-Rise of Reapplied Off-State Voltage = 20V/usec Linear + Consult factory if guaranteed turn-off time is required. Typical turn-off time increases 30%, if Ip is increased to 500 amps. 819

C150, C152 BO [TT TTT [_] SL 1. : “| es a a 7A | Eke fet a = gy SS ose oe 2 ya Fa SS ty 7 130 4 F cop NSS Fs a OD 7A Fd i sop tt A # 0 7 Eto ISS i a 7

3 J es 27 /

8 A eo AL Ye

3 60) od Ble: > f oof cxpyerin AA tt tt eee TT TTT TT | fee a 3 ‘ , § Ly Cn PLT TTT TT) sjAeeee rr eS = % 10 20 30 40 50 60 70 80 90 100 I10 120 ° 10 20° 30-40 50 60 70 80 90 100 NO 120 AVERAGE ON-STATE CURRENT ~- AMPERES: AVERAGE ON-STATE CURRENT-AMPERES 1. MAXIMUM ALLOWABLE CASE TEMPERATURE 2. MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM FOR SINUSOIDAL CURRENT WAVEFORM

50 TO 400 CPS

4000 140, CT TTT TT rrr ys? -¢ ssooi | | | ewot [| 1 TT TA z | | ime W_ AY pe EPP erry Eieol SS ; E | bea Ee PTNSRSSS es A 7 A ASSN # 2000] seomyetod AA a ~~ < pes y} ZYI7I_ Tt _i 4 uty cyte | Ive | live | |izal fia ve IA 2 wool [sel Zr 7a TTP ge GAAS FF gt TET © sol ger tt or fe. Do] de 7 sc | Pe A A | A 100 300 500 700 900 T0oo co) 10 20° 30 40 50 60 70 60 80 100 lO 120 AVERAGE ON—STATE CURRENT- AMPERES AVERAGE ON-STATE CURRENT- AMPERES 3. MAXIMUM ON-STATE POWER DISSIPATION 4, MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSOIDAL CURRENT WAVEFORM FOR RECTANGULAR CURRENT (EXTENDED RANGE) WAVEFORM — 50 TO 400 cPS 18¢ BEER eRe EEE 160 tf} esol A 8° ee 150 BEER rea est 1 130 7 ee A 4 ee a 7172747 a 2 a Bop fF 1 AAA) Beooof | tA pt nL 9219 7,0 Po] gh [bury ever N87] PT 7 1 | td got + Yet Ey oy wove SUN §+0|-| fe TT TFeven $4 §° °° ye qu a ai TS soo] rene TT fee a Ze AL Fe A 0 10 20 30 40 50 60 70 80 90 100 1M 120 100 300 500 700 900 OO AVERAGE ON- STATE CURRENT - AMPERES AVERAGE ON-STATE CURRENT- AMPERES 5. MAXIMUM ON-STATE POWER DISSIPATION 6. ON-STATE POWER DISSIPATION FOR FOR RECTANGULAR CURRENT WAVEFORM RECTANGULAR CURRENT WAVEFORM 820

Lo NE SI 10; oe a s | Te (/_ ee ee ee See al a a es aE eS IES (SS seen a a cee ee ee ae ee

1000 BCU TTT

=z cI 5 — ar il 1rerol seheeslnal be | a 9/2 IsLocking VOLTAGE=0 a 7: | z SY AF A NS RS SS ad ee Sl Se a A A + [oo ¢ o—fr] | | tke = 2 ae SS ee ot Be a se ee a a 2. Wm a SS a | 2 ! 2 3 A s ¢ ' PULSE wioTH miiseconss © 7 INSTANTANEOUS ON-VOLTAGE-VoLTS 7. C150 FORWARD CONDUCTION 8. SUB-CYCLE SURGE RATING FOLLOWING CHARACTERISTIC, ON-STATE RATED LOAD CONDITIONS

190 E900 wars Ee

e 2owarrs IK, a a 3“ wo Se RT Oo 4 0 EEK th

5 Can l

g Se ean eerie 1. Maximum allovable gate power dissipation = 2 Watts. 2 “CONT eT 3. Tp = Rectangular Gate Current Pulse Width. & [TAHT 20, 2000 is MINIMUM GATE SOURCE LOAD LINE| 4 Fe \\ AT dizgy> 100 AMP/. Tp= 5p SEC MIN., g ? ailll| 0.5 sec MAX RISE TIME * IL LI Miesitssictnnt eae coves ono LULA TTT aes game Tosh SEC Ne, Oe Oo 2 4 6 B10 2. 4. 6.8.10 20 4 6 810 INSTANTANEOUS GATE CURRENT - AMPERES 9. GATE TRIGGERING CHARACTERISTICS “CTT TTT TT TTT = os | UT Tiles THT TTT TT

5 LETT Tr Tr Tt

¥ ool OOM VAC é PE Tt seo 5 03 A ee i LETT i a ett | tii) Soo | eee IT | IT g Uae ear TTT ee | F CUA TT i Te oer TT TTT TT TTT} i io nies 100 ane s00: 10 190 10. TRANSIENT THERMAL IMPEDANCE — JUNCTION-TO-CASE 821

Estat. a eet gg EE Peesefessofzesel sso sof iassficas! OT U2 [Te [eo] soo esofianol | > Nt eth “Oe [e [iseoner | reaner | w | 056] oro] 127] 179] | Ee er [8 [iseohieoo|aeiefesral [| |_|] ii aoa [e [ste ner [roe ner [> [oad] sioleraslean] | a [| aor] eerfeoaderor! | | | |] [me ee [eg [a [sek one] [4 [305] is [errfiose] +] — Toco] — | ise] a | [ee oe em sre Feat tea meat i [i Tose) zie} soesef | | 1 | 1] NOTES: 1. One nut and one lockwasher supplied with each unit. Material of hardware is steel, cad plated. 2. “T" dimension is area of unthreaded portion. Com- plete threads are within 2.5 threads of seating plane. 3. Angular orientation of terminals is undefined. oe Sete, F | & [tozofiieo]zssojzese] c | 350] — | ase] —] | Sere SEENOTE.| 4 at * [8 | 390] 00] 2801270] m | 275] 25] ese] aze| | lL lle |. [Fe [istojizso|sserjaces|-n [005] 050 | 15 [earl | = aa | acum © |i eee z eee CHAT NA [ear er [ezefator w | seo] — [ease] — [2] al [T r Le [s[v4o} 120] 35s] sei r | — [ovo] — [oar] 3 _| lan c v—| T= [ooo reef i [2 | 209 |"si0] avolisaa] v_[ione| oss ere] azo] | ee ‘ [x [esol zor] sso ref | | | | 1 4 bP [eso [me [catine [AEE] MOF [ve sown NOTES: ® 1, Gate and auxiliary cathode leads supplied lightly twisted together. 2. Flexible copper lead. 3. One nut and one lockwasher supplied with each unit. Material of hardware is steel, cad plated. 4, “R" dimension is diameter of effective seating area. 5. “T" dimension is area of unthreaded portion. Com- plete threads are within 2.5 threads of seating plane. 6. Angular orientation of terminals is undefined. 822