2SC1096 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096
DESCRIPTION
- With TO-202 package
- Low breakdown voltage
- High current
- High fT
APPLICATIONS
- For audio frequency power amplifier and low speed switching applications
- Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 0.6 A Ta=25? 1.2 PC Collector power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Fig.1 simplified outline (TO-202) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 30 V ICBO Collector cut-off current VCB=30V;IE=0 1.0 µA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1.0A ; VCE=5V 40 250 COB Output capacitance IE=0; VCB=10V;f=1.0MHz 55 pF fT Transition frequency IC=0.1A ; VCE=5V 65 MHz \\u hFE-1 classifications N M L K 40-60 50-100 80-160 120-250
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 PACKAGE OUTLINE Fig.2 outline dimensions