BTP9050N3

BTP9050N3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 1/7 BTP9050N3 CYStek Product Specification High Voltage PNP Epitaxial Planar Transistor BTP9050N3

Description

• High breakdown voltage. (BVCEO=-500V)
• Low saturation voltage, typical VCE(sat) =-0.11V at Ic/IB =-20mA/-2mA.
• Complementary to BTNA45N3
• Pb-free lead plating and halogen-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO -500 V Collector-Emitter V oltage VCEO -500 V Emitter-Base V oltage VEBO -7 V Collector Current(DC) IC -150 mA Peak Collector Current , single pulse, pulse width tp<1ms ICM -500 mA Peak Base Current, single pulse, pulse width tp<1ms IBM -200 mA Power Dissipation PD 300 (Note) mW Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint. BTP9050N3 SOT-23 C E B B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 2/7 BTP9050N3 CYStek Product Specification Thermal Characteristics Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient, in free air (Note) Rth,j-a 417 Thermal Resistance, Junction-to-Solder point Rth,j-sp 70 °C/W Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -500 - - V IC=-100μA BVCEO -500 - - V IC=-1mA BVEBO -7 - - V IE=-50μA ICBO - - -100 nA VCB=-480V ICES - - -100 nA VCE=-480V , VBE=0V IEBO - - -100 nA VEB=-7V *VCE(sat) - -0.11 -0.2 V IC=-20mA, IB=-2mA *VCE(sat) - -0.11 -0.2 V IC=-50mA, IB=-10mA *VBE(sat) - -0.79 -0.9 V IC=-50mA, IB=-10mA *hFE 1 100 - 300 - VCE=-10V , IC=-10mA *hFE 2 80 - 300 - VCE=-10V , IC=-50mA *hFE 3 50 - - - VCE=-10V , IC=-100mA fT - 50 - MHz VCE=-10V , IC=-10mA, f=10MHz Cob - 12 - pF VCB=-10V , IE=0A, f=1MHz Cib - 85 - pF VEB=-0.5V , IC=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 3/7 BTP9050N3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0123456 -VCE , Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 200uA 300uA 400uA 500uA 1mA -IB=100uA Emitter Grounded Output Characteristics 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0123456 CE , Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 1mA 2.5mA 5mA -IB=500uA Emitter Grounded Output Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0123456 -VCE , Collector-to-Emitter Voltage(V) -IC, Collector Current(A) -IB=2mA 4mA 6mA 10mA 20mA Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0123456 -VCE , Collector-to-Emitter Voltage(V) -IC, Collector Current(A) -IB=5mA 10mA 15mA 25mA 50mA Current Gain vs Collector Current 100 1000 1 10 100 1000 -IC, Collector Current(mA) HFE, Current Gain 125°C 75°C 25°C -VCE=5V Current Gain vs Collector Current 100 1000 1 10 100 1000 -IC, Collector Current(mA) HFE, Current Gain 125°C 75°C 25°C -VCE=10V

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 4/7 BTP9050N3 CYStek Product Specification Typical Characteristics Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 -IC, Collector Current(mA) Saturation Voltage(mV) 125°C 75°C 25°C VCESAT@IC=10IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 -IC, Collector Current(mA) Saturation Voltage(mV) 125°C 75°C 25°C VCESAT@IC=20IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 -IC, Collector Current(mA) Saturation Voltage(mV) VBESAT@IC=10IB 25°C 75°C 125°C On Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) On Voltage(mV) VBEON@VCE=-10V 25°C 75°C 125°C Power Derating Curve 100 150 200 250 300 350 0 50 100 150 200 TA, Ambient Temperature(℃) PD, Power Dissipation(mW) Device mounted on FR-4 board of minimum pad size Capacitance vs Reverse-biased Voltage 100 1000 0.1 1 10 100 VR, Reverse-biased Voltage(V) Capacitance(pF) Cib Cob

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 5/7 BTP9050N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 6/7 BTP9050N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : Page No. : 7/7 BTP9050N3 CYStek Product Specification SOT-23 Dimension *:Typical Inches H JKD A L GV C B S Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: Product Code Date Code: Year+Month Year: 7→2007, 8→2008 LL H 0.0005 0.0040 0.013 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.