BTP6520A3 CYSTEKEC | Alldatasheet

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Technical content

Features

  • High Breakdown Voltage:BVCEO≥-350V
  • Complementary to BTN6517A3 Symbol Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current---continuous IC -500 mA Power Dissipation @TA=25℃ Pd 625 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTP6520A3 TO-92 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4 BTP6520A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -350 - - V IC=-100μA BVCEO -350 - - V IC=-1mA BVEBO -5 - - V IE=-10μA ICBO - - -50 nA VCB=-250V IEBO - - -50 nA VEB=-4V VCE(sat) 1 - - -0.3 V IC=-10mA, IB=-1mA VCE(sat) 2 - - -0.35 V IC=-20mA, IB=-2mA *VCE(sat) 3 - - -0.5 V IC=-30mA, IB=-3mA *VCE(sat) 4 - - -1.0 V IC=-50mA, IB=-5mA VBE(sat) 1 - - -0.75 V IC=-10mA, IB=-1mA VBE(sat) 2 - - -0.85 V IC=-20mA, IB=-2mA *VBE(sat) 3 - - -0.9 V IC=-30mA, IB=-3mA VBE(on) - - -2 V VCE=-10V, IC=-100mA hFE 1 20 - - - VCE=-10V, IC=-1mA hFE 2 30 - - - VCE=-10V,IC=-10mA *hFE 3 30 - 200 - VCE=-10V,IC=-30mA *hFE 4 20 - 200 - VCE=-10V,IC=-50mA *hFE 5 15 - - - VCE=-10V,IC=-100mA fT 40 - 200 MHz VCE=-20V, IC=-10mA, f=20MHz Cob - - 6 pF VCB=-20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 3/4 BTP6520A3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE VCE=10V Saturation Voltage vs Collector Current 100 1000 10000 100000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB On voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Collector---IC(mA) ON Voltage---(mV) VBE(on)@VCE=10V Power Derating Curve 100 200 300 400 500 600 700 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 4/4 BTP6520A3 CYStek Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α 1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α 3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3 6520