BTP5401A3 CYSTEKEC | Alldatasheet
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CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 BTP5401A3 CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor BTP5401A3
Description
- The BTP5401A3 is designed for general purpose amplification.
- Large IC , IC( Max) = -0.6A
- High BVCEO, BVCEO= -150V
- Complementary to BTN5551A3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO -160 V Collector-Emitter V oltage V CEO -150 V Emitter-Base V oltage V EBO -5 V Collector Current I C -0.6 A Power Dissipation Pd 625 mW Thermal Resistance, Junction to Ambient R θJA 200 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C TO-92 BTP5401A3 B：Base C：Collector E：Emitter E B C
CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 BTP5401A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -160 - - V I C=-100µA BVCEO -150 - - V I C=-1mA BVEBO -5 - - V I E=-10µA ICBO - - -50 nA V CB=-120V IEBO - - -50 nA V EB=-3V *VCE(sat) 1 - - -0.2 V I C=-10mA, IB=-1mA *VCE(sat) 2 - - -0.5 V I C=-50mA, IB=-5mA *VBE(sat) 1 - - -1 V I C=-10mA, IB=-1mA *VBE(sat) 2 - - -1 V I C=-50mA, IB=-5mA hFE 1 50 - - - V CE=-5V , IC=-1mA hFE 2 56 - 390 - V CE=-5V , IC=-10mA hFE 3 50 - - - V CE=-5V , IC=-50mA fT 100 - 300 MHz V CE=-10V , IC=-10mA, f=100MHz Cob - - 6 pF V CB=-10V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank K P Q R Range 56~120 82~180 120~270 180~390
CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 3/4 BTP5401A3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 Collector Current---IC(mA) Current Gain---HFE HFE@VCE=5V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=12V Power Derating Curve 100 200 300 400 500 600 700 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(mW)
CYStech Electronics Corp. Spec. No. : C307A3 Issued Date : 2003.06.27 Revised Date : Page No. : 4/4 BTP5401A3 CYStek Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α 1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α 3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: 42 Alloy ; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. N5401 Marking: A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3