BTP2014L3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • 4 Amps continuous current, up to 10 Amps peak current
  • Very low saturation voltage
  • Extremely low equivalent on resistance, RCE(SAT)=79mΩ typ. at 3A
  • Pb-free lead plating and halogen-free package Symbol Outline BTP2014L3 E：Emitter B C C E B：Base C：Collector SOT-223 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO -180 V Collector-Emitter V oltage VCEO -140 V Emitter-Base V oltage VEBO -7 V Continuous Collector Current IC -4 A Peak Collector Current ICP -10 A Base Current IB -1 A 3 (Note 1) W Power Dissipation @TA=25°C PD 1.6 (Note 2) W Operating and Storage Temperature Range Tj ; Tstg -55 ~ +150 °C

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 2/8 BTP2014L3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 12.5 °C/W Thermal Resistance, Junction-to-ambient, max 41.7 (Note 1) °C/W Thermal Resistance, Junction-to-ambient, max RθJA 78 (Note 2) °C/W Note: 1.For a device surface mounted on 52mm×52mm×1.6mm FR 4 PCB of 2oz. copper, in still air condition. 2.For a device surface mounted on 25mm×25mm×1.6mm FR 4 PCB of 1oz. copper, in still air condition. Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -180 -200 - V IC=-100μA BVCER -180 -200 - V IC=-1μA, RBE≤1kΩ *BVCEO -140 -160 - V IC=-10mA BVEBO -7 -8 - V IE=-100μA ICBO - - -20 nA VCB=-150V ICER - - -20 nA VCE=-150V , RBE≤1kΩ IEBO - - -10 nA VEB=-6V *VCE(sat)1 - -39 -60 mV IC=-100mA, IB=-5mA *VCE(sat)2 - -52 -80 mV IC=-500mA, IB=-50mA *VCE(sat)3 - -84 -120 mV IC=-1A, IB=-100mA *VCE(sat)4 - -236 -360 mV IC=-3A, IB=-300mA *RCE(sat) - 79 120 mΩ IC=-3A, IB=-300mA *VBE(sat) - -965 -1040 mV IC=-3A, IB=-300mA *VBE(on) - -853 -930 mV VCE=-5V , IC=-3A hFE1 100 225 - - VCE=-5V , IC=-10mA hFE2 100 200 300 - VCE=-5V , IC=-1A *hFE3 35 - - - VCE=-5V , IC=-3A *hFE4 - 5 - - VCE=-5V , IC=-10A fT - 120 - MHz VCE=-10V , IC=-100mA, f=50MHz Cob - 31 - pF VCB=-10V , f=1MHz ton 42 ns toff 636 ns IC=-1A, IB1=-100mA, IB2=100mA, VCC=-50V *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 3/8 BTP2014L3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 200uA 300uA 400uA 500uA 1mA -IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 1.5mA 2mA 2.5mA 5mA -IB=500uA Emitter Grounded Output Characteristics 0.5 1.5 2.5 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 4mA 6mA 8mA 20mA -IB=2mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 3.5 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 10mA 15mA 25mA 50mA -IB=5mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=-2V Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) Current Gain---HFE Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=-5V

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 4/8 BTP2014L3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=10IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=20IB Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 -IC, Collector Current(mA) Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT@IC=50IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 -IC, Collector CurrentmA) Saturation Voltage---(mV) VBESAT@IC=10IB Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 -IC, Collector Current(mA) On Voltage---(mV) VBEON@VCE=-5V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C Capacitance vs Reverse-biased Voltage 100 1000 0.1 1 10 100 -VR, Reverse-biased Voltage(V) Capacitance---(pF) Cib Cob

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 5/8 BTP2014L3 CYStek Product Specification Typical Characteristics(Cont.) Power Derating Curve 0.5 1.5 2.5 3.5 0 25 50 75 100 125 150 175 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Note 1 on page 2 Note 2 on page 2 Cutoff Frequency vs Collector Current 100 1000 10 100 1000 -IC, Collector Current(mA) Cutoff Frequency---fT(MHz) VCE=-10V Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 6/8 BTP2014L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 7/8 BTP2014L3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C624L3 Issued Date : 2013.04.19 Revised Date : Page No. : 8/8 BTP2014L3 CYStek Product Specification SOT-223 Dimension *: Typical 3 2 1 F B A C D E G H a1 I Marking: Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Device Name Year Code: 5→2005, 6→2006, 7→2007,…,etc Month Code: 1→Jan,2→ Feb,3→Mar, …, 9 →Sep, A→Oct, B→ Nov, C→ Dec P2014 D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.