BTN4401N3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 BTN4401N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTN4401N3

Description

  • The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching application.
  • High current , IC = 0.6A
  • Low VCE(sat) , VCE(sat) = 0.2V(typ.) at IC/IB = 500mA/50mA Optimal for low Voltage operation
  • Complementary to BTP4403N3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 60 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 0.6 A Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN4401N3 SOT-23 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 2/4 BTN4401N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V I C=100µA BVCEO 40 - - V I C=1mA BVEBO 6 - - V I E=10µA ICEX - - 100 nA V CE=35V , VBE=-0.4V *VCE(sat)1 - - 0.4 V I C=150mA, IB=15mA *VCE(sat)2 - 0.2 0.75 V I C=500mA, IB=50mA *VBE(sat)1 - - 0.95 V I C=150mA, IB=15mA *VBE(sat)2 - - 1.2 V I C=500mA, IB=50mA *hFE1 20 - - - V CE=1V , IC=0.1mA *hFE2 40 - - - V CE=1V , IC=1mA *hFE3 80 - - - V CE=1V , IC=10mA *hFE4 82 - 390 - V CE=1V , IC=150mA *hFE5 40 - - - V CE=2V , IC=500mA fT - 250 - MHz V CE=5V , IC=20mA, f=100MHz Cob - 6 - pF V CB=5V , f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE4 Rank P Q R Range 82~180 120~270 180~390 Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---IC(mA) Current Gain---HFE HFE@VCE=3V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=10IB

CYStech Electronics Corp. Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 3/4 BTN4401N3 CYStek Product Specification Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current--- IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 0.1 1 10 100 Collector Current---IC(mA) Cutoff Frequency---FT(GHZ) FT@VCE=5V Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature --- Ta( ℃ ) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C203N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 4/4 BTN4401N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3