BTD8530F3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 1/6 BTD8530F3 CYStek Product Specification NPN Epitaxial Planar Transistor BTD8530F3

Description

The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features:

  • High BVCEO
  • Low VCE(SAT)
  • High current gain
  • Monolithic construction with built-in base-emitter shunt resistors
  • Pb-free lead plating package Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage VCBO 250 V Collector-Emitter V oltage VCEO 250 V Emitter-Base V oltage VEBO 10 V IC(DC) 10 Collector Current IC(Pulse) 15 *1 A Pd(TA=25℃) 2 Power Dissipation Pd(TC=25℃) 100 W Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 °C Note : *1. Single Pulse Pw=300μs TO-263 BTD8530F3 R1≈4k R2≈60 E C B B：Base C：Collector E：Emitter B C E

CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 2/6 BTD8530F3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 250 - - V IC=100μA, IE=0 BVCEO 250 - - V IC=1mA, IB=0 ICEO - - 100 μA VCE=250V , IE=0 ICBO - - 100 μA VCB=220V , IE=0 IEBO - - 2 mA VEB=5V , IC=0 *VCE(sat) 1 - - 1 V IC=5A, IB=7mA *VCE(sat) 2 - - 1.2 V IC=6A, IB=5mA *VCE(sat) 3 - - 1.5 V IC=10A, IB=12.5mA *VBE(sat) - - 1.8 V IC=5A, IB=15mA *VBE(on) - - 1.8 V VCE=4V , IC=8A *hFE 1 1500 - - - VCE=2V , IC=2A *hFE 2 2000 - - - VCE=4V , IC=5A *hFE 3 1500 - - - VCE=5V , IC=10A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

BTD8530F3 TO-263 800 pcs / Tape & Reel (Pb-free lead plating) Typical Characteristics Current Gain vs Collector Current 100 1000 10000 100000 0.1 1 10 100 Collector Current---IC(A) Current Gain---HFE HFE VCE=2V VCE=4V Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 Collector Current ---IC(A) Saturation Voltage---(mV) VCESAT IC=800IB IC=1200IB

CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 3/6 BTD8530F3 CYStek Product Specification Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 Collector Current ---IC(A) Saturation Voltage---(mV) VBESAT@IC=333IB ON Voltage vs Collector Current 100 1000 10000 0.01 0.1 1 10 100 Collector Current ---IC(mA) ON Voltage --- (mV) VBE(ON)@VCE=4V Typical Built-in Diode Characteristics 0.001 0.01 0.1 100 100 1000 10000 Forward Voltage---VF(mV) Forward Current---IF(A) Output Capacitance vs Reverse Biased Voltage 100 1000 0.1 1 10 100 Reverse Biased Voltage---VCB(V) Capacitance---(pF) Cob Power Derating Curve 0.5 1.5 2.5 0 50 100 150 200 Ambient Temperature ---TA(℃ ) Power Dissipation---PD(W) Power Derating Curve 100 120 0 50 100 150 200 Case Temperature ---TC(℃ ) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 4/6 BTD8530F3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 5/6 BTD8530F3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C603F3 Issued Date : 2010.06.30 Revised Date : 2010.10.07 Page No. : 6/6 BTD8530F3 CYStek Product Specification TO-263 Dimension *:Typical Inches Millimeters Inches Millimeters A B C D 123 K L J G H F E 2 α1 I E 0.1600 0.1900 4.06 4.83 α1 - - 6° 8° F 0.0450 0.0550 1.14 1.40 α2 - - 6° 8° G 0.0900 0.1100 2.29 2.79 α3 - - 0° 5° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style : Pin 1.Base 2.Collector 3.Emitter 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Marking : D8530 □□□□ Device Date Name Code