BTD5510F3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/5 BTD5510F3 CYStek Product Specification NPN Epitaxial Planar Transistor BTD5510F3

Description

The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features:

  • High BVCEO
  • Low VCE(SAT)
  • High current gain
  • Monolithic construction with built-in base-emitter shunt resistors
  • Pb-free package Equivalent Circuit Outline TO-263-3L BTD5510F3 B：Base C：Collector E：Emitter B C E B C E

CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 2/5 BTD5510F3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 250 V Collector-Emitter V oltage V CEO 250 V Emitter-Base V oltage V EBO 10 V Collector Current I C 15 A Pd(TA=25℃) 2 Power Dissipation Pd(TC=25℃) 60 W Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W Thermal Resistance, Junction to Case R θJC 2.08 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1. Single Pulse Pw=100ms Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 250 - - V I C=100µA, IE=0 BVCEO 250 - - V I C=1mA, IB=0 ICEO - - 100 µA V CE=250V , IE=0 ICBO - - 100 µA V CB=250V , IE=0 IEBO - - 5 mA V EB=5V , IC=0 *VCE(sat) 1 - - 780 mV I C=200mA, IB=300uA *VCE(sat) 2 - - 1.4 V I C=10A, IB=250mA *VCE(sat) 3 - - 1.3 V I C=7A, IB=50mA *VCE(sat) 4 - - 1.2 V I C=5A, IB=20mA *VCE(sat) 5 - - 1.1 V I C=4A, IB=5mA *VBE(sat) - - 2 V I C=8A, IB=15mA *VBE(on) - - 1.8 V V CE=4V , IC=8A *hFE 1000 - - - V CE=10V , IC=5A *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 3/5 BTD5510F3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 100000 Collector Current---IC(mA) Current Gain---HFE HFE VCE=4V VCE=2V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 100000 Collector Current ---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=1000IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 100000 Collector Current ---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=250IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 100000 Collector Current ---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=500IB Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 100000 Collector Current ---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=250IB ON Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 100000 Collector Current ---IC(mA) ON Voltage --- (mV) VBE(ON)@VCE=4V

CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 4/5 BTD5510F3 CYStek Product Specification Characteristic Curves(Cont.) Power Derating Curve 0.5 1.5 2.5 0 50 100 150 200 Ambient Temperature ---TA(℃ ) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temperature ---TC(℃ ) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 5/5 BTD5510F3 CYStek Product Specification TO-263 Dimension *:Typical E 0.1600 0.1900 4.06 4.83 α 1 - - 6° 8 ° F 0.0450 0.0550 1.14 1.40 α 2 - - 6° 8 ° G 0.0900 0.1100 2.29 2.79 α 3 - - 0° 5 ° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : 42 Alloy ; solder plating
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D 123 K L J G H F E 2 α 1 α 2 α 3 I Style : Pin 1.Base 2.Collector 3.Emitter 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Marking : D5510