BTD4512F3

BTD4512F3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
• RoHS compliant package

Applications

• CCFL drivers
• V oltage regulators
• Relay drivers
• High efficiency low voltage switching applications Symbol Outline BTD4512F3 C：Collector E：Emitter B：Base TO-263 B C E

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 2/ 8 BTD4512F3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage (IE=0) VCBO 150 V Collector-Emitter V oltage (IB=0) VCEO 60 V Emitter-Base V oltage (IC=0) VEBO 7 V Collector Current (DC) IC 7 Collector Current (Pulse) ICP 12 (Note 1) A Base Current IB 2 A Power Dissipation @ TA=25℃ PD 1.65 Power Dissipation @ TC=25℃ PD 40 W Thermal Resistance, Junction to Ambient RθJA 75.8 °C/W Thermal Resistance, Junction to Case RθJC 3.125 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 150 - - V IC=100μA, IE=0 *BVCEO 60 - - V IC=1mA, IB=0 BVEBO 7 - - V IC=100μA, IC=0 ICBO - - 100 nA VCB=150V , IE=0 IEBO - - 100 nA VEB=7V , IC=0 *VCE(sat) 1 - 14 25 mV IC=100mA, IB=5mA *VCE(sat) 2 - 58 70 mV IC=1A, IB=50mA *VCE(sat) 3 - 94 120 mV IC=1A, IB=10mA *VCE(sat) 4 - 118 180 mV IC=2A, IB=40mA *VCE(sat) 5 - 185 260 mV IC=4A, IB=400mA *VCE(sat) 6 - 215 300 mV IC=4A, IB=80mA *VCE(sat) 7 - 260 400 mV IC=5A, IB=200mA *VBE(sat) - 0.9 1.2 V IC=2A, IB=100mA *hFE 1 200 - - - VCE=2V , IC=10mA *hFE 2 200 - 500 - VCE=2V , IC=500mA *hFE 3 200 - - - VCE=2V , IC=1A *hFE 4 40 - - - VCE=2V , IC=10A fT - 150 - MHz VCE=10V , IC=50mA Cob - 54 - pF VCB=10V , f=1MHz ton - 45 - ns toff - 630 - ns VCC=10V , IC=10IB1=-10IB2=1A, RL=10Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 3/ 8 BTD4512F3 CYStek Product Specification Typical Characteristics Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 200uA 300uA 400uA 500u 1mA IB=100uA Emitter Grounded Output Characteristics 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) 1mA 1.5mA 2mA 2.5mA 5mA IB=500uA Emitter Grounded Output Characteristics 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=2mA 4mA 6mA 10mA 20mA Emitter Grounded Output Characteristics 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=5mA 10mA 20mA 50mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V 125°C 75°C 25°C Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=2V 125°C 75°C 25°C

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 4/ 8 BTD4512F3 CYStek Product Specification Typical Characteristics(Cont.) Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=5V 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=20IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=50IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=100IB 125°C 75°C 25°C Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBESAT@IC=10IB 25°C 75°C 125°C On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VBEON@VCE=2V 25°C 75°C 125°C

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 5/ 8 BTD4512F3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage 100 1000 10000 0.1 1 10 100 Reverse-biased Voltage---VR(V) Capacitance---(pF) Cib Cob Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temeprature---TC(℃) Power Dissipation---PD(W)

Ordering Information

(Pb-free lead plating) 800pcs / tape & reel

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 6/ 8 BTD4512F3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 7/ 8 BTD4512F3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 8/ 8 BTD4512F3 CYStek Product Specification TO-263 Dimension *:Typical Inches Marking : E 0.1600 0.1900 4.06 4.83 α1 - - 6° 8° F 0.0450 0.0550 1.14 1.40 α2 - - 6° 8° G 0.0900 0.1100 2.29 2.79 α3 - - 0° 5° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D 123 K L J G H E F Device Name Year Code: 9→2009, 0→ 2010,…, etc Month Code: 1→Jan, 2→ Feb,…,9 → Sep, A→Oct, B→Nov, C→ Dec 2 α1 I Style : Pin 1.Base 2.Collector 3.Emitter 4.Collector 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3