BTD2195T3

BTD2195T3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 1/6 BTD2195T3 CYStek Product Specification NPN Epitaxial Planar Transistor BVCEO 120V IC 4A VCE(SAT) BTD2195T3 1.5V(max)

Description

The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) BTD2195T3 TO-126 C B R2≒120 E R1≒8K B：Base C：Collector E：Emitter E C B Parameter Symbol Limits Unit Collector-Base V oltage VCBO 130 Collector-Emitter V oltage VCEO 120 VEBO 5 V Emitter-Base V oltage Collector Current (DC) IC 4 Collector Current (Pulse) ICP 6 (Note 1) A TA=25°C 1.25 Power Dissipation PD 40 W TC=25°C Thermal Resistance, Junction to Ambient RθJA 100 RθJC 3.13 °C/W Thermal Resistance, Junction to Case Operating Junction Temperature Range Tj -55~+150 °C Storage Temperature Range Tstg -55~+150 Note : 1. Single Pulse Pw≦300μs, Duty≦2%.

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 2/6 BTD2195T3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 120 - - V IC=1mA, IB=0 BVCBO 130 - - V IC=100μA, IE=0 ICBO - - 10 μA VCB=100V , IE=0 ICEO - - 10 μA VCE=100V , IB=0 IEBO - - 2 mA VEB=5V , IC=0 *VCE(sat) - - 1.5 V IC=2A, IB=2mA *VBE(on) 2 V VCE=4V , IC=2A *hFE1 1000 - - - VCE=4V , IC=1A *hFE2 1000 - - - VCE=4V , IC=2A Cob - 200 pF VCB=10V , IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking BTD2195T3 TO-126 (Pb-free lead plating) 200 pcs / bag, 15 bags/box, 10 boxes/carton D2195

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 3/6 BTD2195T3 CYStek Product Specification Typical Characteristics Current Gain vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE Ta=25°C Ta=75°C Ta=125°C VCE=3V Current Gain vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE Ta=25°C Ta=75°C Ta=125°C VCE=4V Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta@125° Ta=75°C VCESAT@IC=250IB Ta=25°C Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta@125° Ta=75°C VCESAT@IC=500IB Ta=25°C Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta=125°C VBESAT@IC=250IB Ta=25°C75°C Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) Ta=125°C VBESAT@IC=250IB Ta=25°C75°C

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 4/6 BTD2195T3 CYStek Product Specification Typical Characteristics(Cont.) On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) Ta=125°C VBEON@VCE=4V Ta=25°C75°C Built-in Diode Characteristics 100 1000 10000 1 10 100 1000 10000 Forward Current---IF(mA) Forward Voltage---VF(mV) Ta=125°C Ta=25°C 75°C Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temeprature---TC(℃) Power Dissipation---PD(W)

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 5/6 BTD2195T3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 6/6 BTD2195T3 CYStek Product Specification TO-126 Dimension *: Typical Inches Millimeters Inches A B C F D E H 1 2 3 KJ I L M G Marking: D2195 Device Name Date Code Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 - *3° - *3° F 0.0280 0.0319 0.71 0.81 α2 - *3° - *3° G 0.0480 0.0520 1.22 1.32 α3 - *3° - *3° H 0.1709 0.1890 4.34 4.80 α4 - *3° - *3° I 0.0950 0.1050 2.41 2.66 E 0.0374 0.0413 0.95 1.05 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.