BTD2195M3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 1/4 BTD2195M3 CYStek Product Specification NPN Epitaxial Planar Transistor BTD2195M3

Description

The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 130 V Collector-Emitter V oltage V CEO 120 V Emitter-Base V oltage V EBO 5 V Collector Current (DC) I C 4 A Collector Current (Pulse) I CP 6 (Note 1) A 0.6 W 1 (Note 2) W Power Dissipation Pd 2 (Note 3) W 208 °C/W 125 (Note 2) °C/W Thermal Resistance, Junction to Ambient R θJA 62.5 (Note 3) °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on a ceramic board with area measuring 40×40×1mm. BTD2195M3 SOT-89 B：Base C：Collector E：Emitter B C E B C E

CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 2/4 BTD2195M3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 120 - - V I C=1mA, IB=0 BVCBO 130 - - V I C=100µA, IE=0 ICBO - - 1 mA V CB=100V , IE=0 ICEO - - 2 mA V CE=50V , IB=0 IEBO - - 2 mA V EB=5V , IC=0 *VCE(sat) - - 1.2 V I C=2A, IB=2mA *VBE(on) 2.8 V V CE=4V , IC=2A *hFE1 1000 - - - V CE=4V , IC=1A *hFE2 500 - - - V CE=4V , IC=2A Cob - 200 pF V CB=10V , IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 3/4 BTD2195M3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE = 4V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VCE(SAT)@IC=250IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) Saturation Voltage---(mV) VBE (SAT)@IC = 250IB On voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---I C(mA) On voltage---(mV) VBE (ON) @VCE = 4V Power Derating Curves 0.5 1.5 2.5 0 50 100 150 200 Ambient Temperature---T A(℃) Power Dissipation---PD(W) See Note 3 on page 1 See Note 2 on page 1

CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 4/4 BTD2195M3 CYStek Product Specification SOT-89 Dimension *: Typical E 0.01417 0.0201 0.36 0.51 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: DP E F G C B A I D H 321 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 Style: Pin 1. Base 2. Collector 3. Emitter