BTD2118J3 CYSTEKEC | Alldatasheet

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Technical content

Features

  • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
  • Excellent current gain characteristics
  • Complementary to BTB1412J3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 50 V Collector-Emitter V oltage V CEO 20 V Emitter-Base V oltage V EBO 6 V Collector Current(DC) I C 5 Collector Current(Pulse) I CP 10 *1 A Power Dissipation(TA=25℃) Pd(T A=25℃) 1 *2 Power Dissipation(TC=25℃) Pd(T C=25℃) 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1. Single Pulse , Pw≦380µs,Duty≦2%. *2. When mounted on a 40*40*0.7mm ceramic board. TO-252 BTD2118J3 B：Base C：Collector E：Emitter B C E

CYStech Electronics Corp. Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 2/4 BTD2118J3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 50 - - V I C=50µA, IE=0 BVCEO 20 - - V I C=1mA, IB=0 BVEBO 6 - - V I E=50µA, IC=0 ICBO - - 0.5 µA V CB=40V , IE=0 IEBO - - 0.5 µA V EB=5V , IC=0 *VCE(sat) - 0.35 1 V I C=4A, IB=0.1A *hFE 120 - 560 - V CE=2V , IC=0.5A fT - 150 - MHz V CE=6V , IC=50mA, f=100MHz Cob - 35 - pF V CB=20V , f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Q R S Range 120~270 180~390 270~560

CYStech Electronics Corp. Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 3/4 BTD2118J3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain--- HFE HFE@VCE=2V Saturation Voltage vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IB=40IB Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage-(mV) VBE(SAT)@IC=20IB Power Derating Curve 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Ambient Temperature---TA(℃ ) Power Dissipation---PD(W) Power Derating Curve 0 50 100 150 200 Case Temperature---TC(℃) Power Dissipation---PD(W) Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage-(mV) VCESAT@IC=20IB

CYStech Electronics Corp. Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 4/4 BTD2118J3 CYStek Product Specification TO-252 Dimension *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. B A C E H I J K D F GL Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Marking: D2118